Datasheet > KTA1666

KTA1666

更新时间： 2024-11-19 02:55:39

品牌	Logo	应用领域
科信 - KEXIN		开关晶体管
页数	文件大小	规格书
2页	1201K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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KTA1666 数据手册

SMD Type

Transistors

PNP Transistors

KTA1666

1.70 0.1

■ Features

● Small Flat Package

● Low Saturation Voltage

0.42 0.1

0.46 0.1

● Power Amplifier and Switching Application

● Comlementary to KTC4379

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

-50

-5

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

-2

500

250

150

℃/W

RθJA

℃

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

CBO

CEO

EBO

-50

-5

Ic= -1 mA， I

Ic= -10 mA，I

= -1 mA， I

CB= -50V , I

EB= -5V , I =0

=-1 A, I =-20mA (Note.1)

BE(sat) IC=-1 A, IB=-20mA (Note.1)

E=0

B=0

C=0

CBO

EBO

E=0

-0.1

-0.5

-1.2

240

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

CE= -2V, I

= -500mA

= -1.5A

DC current gain

hFE

Collector output capacitance

Transition frequency

CB= -10V, I

E= 0,f=1MHz

^CE= -2V, I = -500mA

120

MHz

Note.1: Pulse test: pulse width ≤300 uS, duty cycle≤ 2.0%.

■ Classification of hfe(1)

Type

Range

Marking

KTA1666-O

70-140

KTA1666-Y

120-240

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中文翻译

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