Datasheet > KTA1664-Y

KTA1664-Y

更新时间： 2022-02-26 11:05:48

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1253K
描述
PNP Transistors

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数据手册

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KTA1664-Y 数据手册

SMD Type

Transistors

PNP Transistors

KTA1664

1.70 0.1

■ Features

● 1W (Mounted on Ceramic Substrate)

● Small Flat Package

0.42 0.1

0.46 0.1

● Comlementary to KTC4376

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Base Current

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-35

-30

-5

-800

-160

500

Collector Power Dissipation

Junction Temperature

150

℃

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

-35

-30

-5

Ic= -1 mA， I

Ic= -10 mA，I

= -1 mA， I

CB= -35V , I

^EB= -5V , I =0

E=0

B=0

C=0

CBO

EBO

E=0

-0.1

-0.7

-1.2

-0.8

320

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=-500mA, I

=-20mA

=-500mA, I

^CE= -1V, I

CE= -1V, I

C= -10mA

C= -100mA

C= -700mA

100

DC current gain

hFE

Collector output capacitance

Transition frequency

CB= -10V, I

E= 0,f=1MHz

^CE= -5V, I = -10mA

120

MHz

■ Classification of hfe(1)

Type

Range

Marking

KTA1664-O

100-200

KTA1664-Y

160-320

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