Datasheet > KTA1666

KTA1666

更新时间： 2024-01-07 10:53:14

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管开关
页数	文件大小	规格书
1页	364K
描述
TRANSISTOR (PNP)

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中文翻译

获取价格

技术参数
数据手册

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KTA1666 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.69
Base Number Matches：	1

KTA1666 数据手册

KTA1666

TRANSISTOR (PNP)

SOT-89-3L

FEATURES

1. BASE

Complementary to KTC4379

Small Flat Package

2. COLLECTOR

3. EMITTER

Low Saturation Voltage

Power Amplifier and Switching Application

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-50

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

-50

-5

Collector Current

-2

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

500

℃/W

℃

R_θJA

T_j

250

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

-50

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= -1mA,I_E=0

I_C=-10mA,I_B=0

I_E=-1mA,I_C=0

V_CB=-50V,I_E=0

-100

240

Emitter cut-off current

I_EBO

V_EB=-5V,I_C=0

h_FE(1)

V_CE=-2V, I_C=-500mA

V_CE=-2V, I_C=-1.5A

I_C=-1A,I_B=-50mA

V_CB=-10V,I_E=0, f=1MHz

V^CE=-2V,I^C= -500mA

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

Transition frequency

V_CE(sat)

V_BE(sat)

C_ob

-0.5

-1.2

f_T

120

MHz

*Pulse test: pulse width ≤300mS, duty cycle≤ 2.0%.

CLASSIFICATION OF h_FE(1)

RANK

RANGE

70–140

120–240

MARKING

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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