Datasheet > KTA1666

KTA1666

更新时间： 2024-11-19 18:09:39

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	527K
描述
SOT-89

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中文翻译

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数据手册

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KTA1666 数据手册

KTA1666

BIPOLAR TRANSISTOR (PNP)

FEATURES

 Complementary to KTC4379

 Low saturation voltage

 Power Amplifier and Switching Application

 Surface Mount device

SOT-89

MECHANICAL DATA



Case: SOT-89

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.055 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

-50

Unit

Collector-Base Voltage

Collector-Emitter Voltage

-50

Emitter-Base Voltage

-5

Collector Current

-2

Collector Power Dissipation

500

°C/W

°C

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

250

150

Storage Temperature

TSTG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I_C=-1mA，I_E=0

I =-10mA I =0

V(BR)CBO

Collector-base breakdown voltage

-50

-5

Collector-emitter

voltage

breakdown

V(BR)CEO

，

V(BR)EBO

I_CBO

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

I_E=-1mA，I_C=0

-0.1

240

uA V_CB=-50V, I_E=0

V_EB=-5V, I_C=0

I_EBO

V_CE=-2V, I_C=-0.5A

V_CE=-2V, I_C=-1.5A

I_C=-1A，I_B=-50mA

h_FE1

DC current gain

h_FE2

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

-0.5

-1.2

120

MHz V_CE=-2V, I_C=-500mA

V_CB=-10V, I_E=0, f=1

Collector output capacitance

C_ob

MHz

CLASSIFICATION OF h_FE

Rank

Range

70-140

120-240

Marking

1 / 4

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD

E-mail:hkt@heketai.com

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