Datasheet > KTA1666

KTA1666

更新时间： 2024-11-19 17:02:15

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	401K
描述
50V,2A,General Purpose PNP Bipolar Transistor

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中文翻译

获取价格

数据手册

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KTA1666 数据手册

PNP Silicon Epitaxial Planar Transistor

KTA1666

Features



Excellent DC current gain characteristics

Low saturation voltage typically

Complement to KTC4379

Mechanical Data



Case: SOT-89

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-89

Ordering Information

Part Number

Package

SOT-89

Shipping Quantity

Marking Code

KTA1666

1000 pcs / Tape & Reel

WO/WY

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

-50

-5

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Collector Current (Peak)

-2

I_CM

-4

Base Current (Continuous)

I_B

-0.4

Thermal Characteristics

Parameter

Power Dissipation

Symbol

P_D

Value

0.5

Unit

Thermal Resistance Junction-to-Air ^*1

Power Dissipation

R_θJA

P_D

250

°C /W

2.8

Thermal Resistance Junction-to-Air ^*2

Thermal Resistance Junction-to-Case

Junction Temperature

R_θJA

R_θJC

T_J

°C /W

°C

-55 ~ +150

Storage Temperature Range

T_STG

°C

STM0209A: September 2023 [2.0]

www.gmesemi.com

12 3 4

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