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KTA1664-Y-TP PDF预览

KTA1664-Y-TP

更新时间: 2024-01-06 00:36:15
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
2页 264K
描述
Small Signal Bipolar Transistor,

KTA1664-Y-TP 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.69Base Number Matches:1

KTA1664-Y-TP 数据手册

 浏览型号KTA1664-Y-TP的Datasheet PDF文件第2页 
KTA1664-O  
KTA1664-Y  
M C C  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
Features  
xꢀ Low Collector Saturation Voltage  
PNP Silicon  
Epitaxial Transistors  
xꢀ Execllent current-to-gain characteristics  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
·
·
·
Moisure Sensitivity Level 1  
Halogen free available upon request by adding suffix "-HF"  
Maximum Ratings  
SOT-89  
Symbol  
Rating  
Rating  
Unit  
VCEO  
Collector-Emitter Voltage  
-30  
V
A
K
VCBO  
VEBO  
IC  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
-35  
-5.0  
-0.8  
V
V
A
B
PC  
Collector power dissipation  
0.5  
W
E
RthJA  
Thermal Resistance From Junction To Ambient  
250  
oC/W  
C
TJ  
Junction Temperature  
Storage Temperature  
150  
к
к
D
TSTG  
-55 to +150  
G
H
J
F
Electrical Characteristics @ 25к Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
V(BR)CBO  
Collector-base Breakdown Voltage  
(IC=-1mAdc, IE=0)  
Collector-Emitter Breakdown Voltage  
(IC=-10mAdc, IB=0)  
Emitter-base Breakdown Voltage  
(IE=-1mAdc, IC=0)  
-35  
---  
---  
Vdc  
V(BR)CEO  
V(BR)EBO  
ICBO  
-30  
-5  
---  
---  
---  
---  
---  
---  
Vdc  
Vdc  
1
2
3
Collector-Base Cutoff Current  
(VCB=-35Vdc,IE=0)  
---  
-0.1  
-0.1  
uAdc  
uAdc  
1. Base  
IEBO  
Emitter-Base Cutoff Current  
(VEB=-5Vdc, IC=0)  
DC Current Gain  
(IC=-1Adc, VCE=-2.0Vdc)  
Collector-Emitter Saturation Voltage  
(IC=-500mAdc, IB=-20mAdc)  
Base-Emitter Voltage  
---  
2. Collector  
3. Emitter  
hFE(1)  
VCE(sat)  
VBE  
100  
---  
---  
---  
320  
-0.7  
-0.8  
---  
---  
Vdc  
Vdc  
MHz  
pF  
ꢀꢁꢂꢃꢄꢅꢁꢄꢅꢆ  
ꢈꢀꢇꢆ  
ꢀꢁꢂꢃꢄꢅꢆ  
ꢇꢇꢆ  
ꢁꢋꢌꢄꢅꢆ  
ꢇꢀꢁꢆ  
ꢍꢎꢏꢐꢆ  
ꢇꢉꢊꢆ  
ꢇꢀꢁꢆ  
ꢒꢍꢐꢓꢆ  
1.55  
ꢇꢉꢊꢆ  
ꢒꢍꢔꢕꢆ  
ꢇꢇꢇꢇꢇ  
-0.5  
---  
ꢉꢆ  
ꢍꢎꢑꢎꢆ  
ꢇꢇꢇꢇꢇ  
(IC=-10mAdc, VCE=-1Vdc)  
Transition Frequency  
.061  
REF.  
fT  
120  
19  
ꢂꢆ  
ꢈꢆ  
ꢄꢆ  
ꢙꢆ  
ꢝꢆ  
ꢃꢆ  
ꢞꢆ  
ꢍꢎꢗꢒꢆ  
ꢍꢕꢐꢎꢆ  
ꢍꢕꢓꢘꢆ  
ꢍꢎꢎꢑꢆ  
ꢍꢕꢎꢐꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢗꢗꢆ  
ꢍꢎꢔꢗꢆ  
ꢍꢕꢐꢓꢆ  
ꢍꢎꢕꢕꢆ  
ꢚꢚꢚꢚꢚꢆ  
ꢐꢍꢓꢎꢆ  
ꢕꢍꢑꢕꢆ  
ꢘꢍꢐꢒꢆ  
ꢐꢍꢕꢕꢆ  
ꢕꢍꢐꢐꢆ  
ꢕꢍꢐꢑꢆ  
ꢕꢍꢐꢑꢆ  
ꢎꢍꢒꢕꢆ  
ꢒꢍ25  
ꢎꢍꢕꢕꢆ  
ꢘꢍꢗꢒꢆ  
ꢚꢚꢚꢚꢚꢆ  
(VCE=-5Vdc, IC=-10mAdc)  
Collector output capacitance  
(VCB=-10Vdc, IE=0,f=1.0MHz)  
Cob  
---  
---  
ꢌꢛꢜꢆ  
ꢍꢕꢎꢓꢆ  
ꢍꢕꢘꢎꢆ  
ꢍꢕꢎꢔꢆ  
ꢍꢕꢔꢐꢆ  
ꢕꢍꢒꢑꢆ  
ꢕꢍꢗꢐꢆ  
ꢕꢍꢒꢎꢆ  
ꢎꢍꢔꢕꢆ  
CLASSIFICATION OF HFE (1)  
Rank  
Range  
Marking  
O
100-200  
RO  
Y
180-390  
RY  
 ꢆ  
www.mccsemi.com  
1 of 2  
Revision: A  
2013/12/25  

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