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KTA1663O PDF预览

KTA1663O

更新时间: 2024-10-01 08:09:11
品牌 Logo 应用领域
WEITRON /
页数 文件大小 规格书
3页 172K
描述
Transistor

KTA1663O 数据手册

 浏览型号KTA1663O的Datasheet PDF文件第2页浏览型号KTA1663O的Datasheet PDF文件第3页 
KTA1663  
PNP Epitaxial Planar Transistors  
P b  
Lead(Pb)-Free  
1. BASE  
2. COLLECTOR  
1
3. EMITTER  
2
3
SOT-89  
ABSOLUTE MAXIMUM RATINGS (T =25˚C)  
A
Rating  
Symbol  
Limits  
Unit  
V
V
Collector-Base Voltage  
CBO  
-35  
-30  
-5.0  
V
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
CEO  
V
EBO  
Collector Current  
I
A
-1.5  
0.5  
C
Collector Power Dissipation  
Junction Temperature  
Storage Temperature Range  
W
P
D
T
-55 to +150  
-55 to +150  
j
˚C  
˚C  
T
stg  
ELECTRICAL CHARACTERISTICS(T =25˚C unless otherwise noted)  
A
Min  
Typ  
Parameter  
Symbol  
Max  
Unit  
Collector-Base Breakdown Voltage  
BV  
BV  
BV  
-35  
-
-
V
V
CBO  
CEO  
EBO  
CBO  
EBO  
I =-1mA, I =0  
C
E
Collector-Emitter Breakdown Voltage  
I =-10mA, I =0  
-30  
-5  
-
-
-
-
-
-
C
B
Emitter-Base Breakdown Voltage  
I =-1mA, I =0  
-
V
E
C
Collector Cutoff Current  
=-30V, I =0  
I
I
-0.1  
-0.1  
µA  
µA  
V
CB  
E
Collector Cutoff Current  
-
V
EB  
=-5V, I =0  
C
WEITRON  
http://www.weitron.com.tw  
1/3  
14-Jul-06  

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