Datasheet > KTA1663

KTA1663

更新时间： 2024-11-18 11:32:15

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
2页	469K
描述
TRANSISTOR (PNP)

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中文翻译

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数据手册

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KTA1663 数据手册

KTA1663

TRANSISTOR (PNP)

SOT-89

1. ^BASE

FEATURES

High current applications

Complementary to KTC4375

2. ^COLLECTOR

3. ^EMITTER

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-30

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-30

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

-1.5

P_C

500

T_J

150

℃

T_stg

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-1mA, I_E=0

V_(BR)CEOI_C=-10mA, I_B=0

V_(BR)EBOI_E=-1mA, I_C=0

-30

-5

I_CBO

I_EBO

h_FE

V_CB=-30V, I_E=0

-0.1

320

-2

μA

Emitter cut-off current

V_EB=-5V, I_C=0

DC current gain

V_CE=-2V, I_C=-0.5A

I_C=-1.5A, I_B=-30mA

V_CE=-2V, I_C=-0.5A

V_CE=-2V, I_C=-500mA

V_CB=-10V, I_E=0,f=1MHz

100

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

-1

Transition frequency

f_T

120

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h^FE

Rank

100-200

160-320

Range

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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