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KTA1662

更新时间: 2024-11-19 18:09:47
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科信 - KEXIN /
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描述
PNP Transistor

KTA1662 数据手册

  
SMD Type  
Transistors  
PNP General Purpose Transistors  
KTA1662  
Unit:mm  
SOT-89  
1.50 ±0.1  
4.50±0.1  
1.80±0.1  
Features  
Small Flat Package.  
Complementary to KTC4374.  
3
1
2
0.44±0.1  
0.48±0.1  
0.53±0.1  
3.00±0.1  
1.Base  
2.Collector  
3.Emitter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
-80  
-80  
V
V
-5  
V
Collector current  
-0.4  
A
Collector power dissipation  
Jumction temperature  
Storage temperature  
PC  
500  
mW  
Tj  
150  
Tstg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test conditons  
Min  
Typ Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
IC=-1mA,IE=0  
-80  
-80  
-5  
IC=-10mA,IB=0  
IE=-1mA,IC=0  
VCB = -80 V, IE = 0  
VEB = -5 V, IC = 0  
-0.1  
-0.1  
240  
µA  
µA  
Emitter cut-off current  
IEBO  
VCE = -2 V, IC = -50mA  
VCE = -2 V, IC = -200m A  
IC = -200mA, IB = -20mA  
VCE=-2V,IC=-5mA  
VCE=-10V,IC=-10mA  
70  
40  
DC current gain  
hFE  
Collector-emitter saturation voltage  
Base-emitter voltage  
VCE (sat)  
VBE  
-0.4  
-1.2  
V
V
Transition frequency  
fT  
120  
14  
MHz  
Collector output capacitance  
Cob  
VCB=-10V,IE=0,f=1MHz  
hFE Classification  
Marking  
Rank  
FO  
O
FY  
Y
Range  
70140  
120240  
1
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