Datasheet > KTA1659O

KTA1659O

更新时间： 2024-11-20 14:51:55

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	106K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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KTA1659O 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

KTA1659O 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220F Plastic-Encapsulate Transistors

TO – 220F

KTA1659 TRANSISTOR (PNP)

1. BASE

FEATURES

2. COLLECTOR

3. EMITTER

High Transition Frequency

High Voltage Applications

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-160

-5

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-1.5

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

℃/W

℃

R_θJA

T_j

62.5

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

-160

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=-100µA,I_E=0

I_C=-10mA,I_B=0

I_E=-1mA,I_C=0

V_CB=-160V,I_E=0

-1

μA

Emitter cut-off current

I_EBO

V_EB=-5V,I_C=0

DC current gain

h_FE

V_CE=-5V, I_C=-100mA

I_C=-500mA,I_B=-50mA

V_CE=-5V, I_C=-500mA

V_CB=-10V,I_E=0, f=1MHz

VCE=-10V,IC=-100mA

240

-1.5

-1

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

Collector output capacitance

Transition frequency

C_ob

f_T

100

MHz

CLASSIFICATION OF h_FE

RANK

RANGE

70-140

120-240

A,Dec,2010

中文翻译

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