Datasheet > KTA1660-Y

KTA1660-Y

更新时间： 2024-11-21 01:11:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1144K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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KTA1660-Y 数据手册

SMD Type

Transistors

PNP Transistors

KTA1660

1.70 0.1

■ Features

● High Voltage

● High Transition Frequency

● Complementary to KTC4372

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Base Current

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-150

-5

-50

-10

500

Collector Power Dissipation

Junction Temperature

150

℃

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -1 mA， I =0

= -100μA， I =0

CB= -150 V , I =0

EB= -5V , I =0

Min

-150

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

-100

-0.8

-1.2

-0.9

240

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=-10 mA, I

=-1mA

C=-10 mA, I

CE= -5V, I

= -30mA

= -10mA

DC current gain

hFE

Collector output capacitance

Transition frequency

CB= -10V, I

^CE= -30V, I

E= 0,f=1MHz

C= -10mA

120

MHz

■ Classification of hfe

Type

Range

Marking

KTA1660-O

70-140

KTA1660-Y

120-240

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