Datasheet > KTA1660

KTA1660

更新时间： 2024-11-20 05:41:03

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关
页数	文件大小	规格书
1页	50K
描述
Epitaxial Planar PNP Transistor

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中文翻译

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数据手册

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KTA1660 数据手册

SMD Type

Transistors

Epitaxial Planar PNP Transistor

KTA1660

Features

High Voltage: VCEO=-150V

High Transition Frequency:fT=120MHz

Small Flat Package

Absolute Maximum Ratings Ta = 25

Parameter

Colletor-Base Voltage

Colletor-Emitter Voltage

Emitter-Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-150

-5

Unit

-50

Base Current

I^B

-10

P^C

500

Colletor Power Dissipation

P^C*

T^j

Junction Temperature

150

Storage Temperature Range

Tstg

-55 to 150

* mounted on ceramic substrate (250mm²X0.8t)

Electrical Characteristics Ta = 25

Parameter

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Symbol

I^CBO

I^EBO

h^FE

Testconditons

Min

Typ

Max

-0.1

240

-0.8

-0.9

Unit

ìA

VCB=-150V,IE=0

VCE=-5V,IC=0

ìA

VCE=-5V,IC=-10mA

IC=-10mA,IB=-1mA

VCE=-5V,IC=-30mA

VCE=-30V,IC=-10mA

VCB=-10V,IE=0,f=1MHz

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

V^CE(sat)

V^BE

Transition Frequency

f^T

120

4.0

MHz

Colletor Output Capacitance

C^ob

5.0

hFE Classification

Marking

Rank

Type

70 140

120 240

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