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KTA1535T

更新时间: 2024-02-13 17:28:52
品牌 Logo 应用领域
KEC 晶体晶体管局域网
页数 文件大小 规格书
3页 86K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

KTA1535T 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.78
最大集电极电流 (IC):3 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):200
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):160 MHzBase Number Matches:1

KTA1535T 数据手册

 浏览型号KTA1535T的Datasheet PDF文件第2页浏览型号KTA1535T的Datasheet PDF文件第3页 
SEMICONDUCTOR  
KTA1535T  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
RELAY DRIVERS, LAMP DRIVERS,  
MOTOR DRIVERS AND STROBES APPLICATION.  
E
B
K
FEATURES  
DIM MILLIMETERS  
Adoption of MBIT Processes.  
High Current Capacitance.  
_
A
B
2.9+0.2  
1.6+0.2/-0.1  
_
C
D
0.70+0.05  
2
1
3
Low Collector-to-Emitter Saturation Voltage.  
High Speed Switching.  
_
0.4+0.1  
E
F
2.8+0.2/-0.3  
1.9+0.2  
_
G
0.95  
Ultrasmall-Sized Package permitting applied sets to be  
made small and slim.  
_
H
I
J
K
L
0.16+0.05  
0.00-0.10  
0.25+0.25/-0.15  
0.60  
High Allowable Power Dissipation.  
Complementary to KTC3535T  
0.55  
I
H
J
J
MAXIMUM RATING (Ta=25)  
1. EMITTER  
2. BASE  
CHARACTERISTIC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
-20  
UNIT  
V
3. COLLECTOR  
-20  
V
-5  
V
DC  
-3  
TSM  
Collector Current  
A
ICP  
Pulse  
-5  
IB  
Base Current  
600  
mA  
W
Marking  
PC *  
Tj  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature Range  
0.9  
Lot No.  
150  
Tstg  
-55150  
Type Name  
S D  
* Package mounted on a ceramic board (600Ὅᴧ0.8)  
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC  
Collector Cut-off Current  
SYMBOL  
ICBO  
TEST CONDITION  
MIN.  
TYP. MAX. UNIT  
VCB=-12V, IE=0  
-
-
-
-0.1  
A  
A  
V
IEBO  
VEB=-4V, IC=0  
Emitter Cut-off Current  
-
-0.1  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
VCE(sat)  
VBE(sat)  
hFE  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
DC Current Gain  
IC=-10A, IE=0  
-20  
-20  
-5  
-
-
-
-
IC=-1mA, IB=0  
-
-
V
IE=-10A, IC=0  
-
V
IC=-1.5A, IB=-30mA  
IC=-1.5A, IB=-30mA  
VCE=-2V, IC=-500mA  
VCE=-2V, IC=-500mA  
VCB=-10V, f=1MHz  
-130  
-0.85  
-
-165  
-1.2  
560  
-
mV  
V
-
200  
-
fT  
Transition Frequency  
160  
45  
MHz  
pF  
Cob  
Collector Output Capacitance  
-
-
I
B2  
PW=20µs  
B1  
ton  
tstg  
tf  
Turn-On Time  
-
-
-
30  
90  
10  
-
-
-
I
<
DC 1%  
=
OUTPUT  
INPUT  
1kΩ  
R
L
V
R
Swiitching  
Storage Time  
Time  
50Ω  
nS  
220µF  
470µF  
V
=5V  
V
=-5V  
CC  
Fall Time  
BE  
-20I =20I =I =-1.5A  
B1  
C
B2  
2001. 6. 28  
Revision No : 0  
1/3  

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