SEMICONDUCTOR
KTA1535T
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS AND STROBES APPLICATION.
E
B
K
FEATURES
DIM MILLIMETERS
ᴌAdoption of MBIT Processes.
ᴌHigh Current Capacitance.
_
A
B
2.9+0.2
1.6+0.2/-0.1
_
C
D
0.70+0.05
2
1
3
ᴌLow Collector-to-Emitter Saturation Voltage.
ᴌHigh Speed Switching.
_
0.4+0.1
E
F
2.8+0.2/-0.3
1.9+0.2
_
G
0.95
ᴌUltrasmall-Sized Package permitting applied sets to be
made small and slim.
_
H
I
J
K
L
0.16+0.05
0.00-0.10
0.25+0.25/-0.15
0.60
ᴌHigh Allowable Power Dissipation.
ᴌComplementary to KTC3535T
0.55
I
H
J
J
MAXIMUM RATING (Ta=25ᴱ)
1. EMITTER
2. BASE
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
-20
UNIT
V
3. COLLECTOR
-20
V
-5
V
DC
-3
TSM
Collector Current
A
ICP
Pulse
-5
IB
Base Current
600
mA
W
Marking
PC *
Tj
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
0.9
Lot No.
150
ᴱ
Tstg
-55ᴕ150
ᴱ
Type Name
S D
* Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ)
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
ICBO
TEST CONDITION
MIN.
TYP. MAX. UNIT
VCB=-12V, IE=0
-
-
-
-0.1
ỌA
ỌA
V
IEBO
VEB=-4V, IC=0
Emitter Cut-off Current
-
-0.1
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
hFE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
IC=-10ỌA, IE=0
-20
-20
-5
-
-
-
-
IC=-1mA, IB=0
-
-
V
IE=-10ỌA, IC=0
-
V
IC=-1.5A, IB=-30mA
IC=-1.5A, IB=-30mA
VCE=-2V, IC=-500mA
VCE=-2V, IC=-500mA
VCB=-10V, f=1MHz
-130
-0.85
-
-165
-1.2
560
-
mV
V
-
200
-
fT
Transition Frequency
160
45
MHz
pF
Cob
Collector Output Capacitance
-
-
I
B2
PW=20µs
B1
ton
tstg
tf
Turn-On Time
-
-
-
30
90
10
-
-
-
I
<
DC 1%
=
OUTPUT
INPUT
1kΩ
R
L
V
R
Swiitching
Storage Time
Time
50Ω
nS
220µF
470µF
V
=5V
V
=-5V
CC
Fall Time
BE
-20I =20I =I =-1.5A
B1
C
B2
2001. 6. 28
Revision No : 0
1/3