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KTA1520S PDF预览

KTA1520S

更新时间: 2024-11-17 11:32:15
品牌 Logo 应用领域
KEC 晶体晶体管局域网
页数 文件大小 规格书
2页 392K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

KTA1520S 技术参数

生命周期:Active零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.8
最大集电极电流 (IC):1 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

KTA1520S 数据手册

 浏览型号KTA1520S的Datasheet PDF文件第2页 
SEMICONDUCTOR  
KTA1520S  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
HIGH VOLTAGE APPLICATION.  
E
L
B
L
DIM MILLIMETERS  
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
_
+
2.93 0.20  
A
B
C
D
E
G
H
J
1.30+0.20/-0.15  
1.30 MAX  
0.45+0.15/-0.05  
2.40+0.30/-0.20  
1.90  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
-120  
-100  
-5  
UNIT  
V
2
3
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
1
V
0.95  
0.13+0.10/-0.05  
0.00 ~ 0.10  
0.55  
V
K
L
P
P
DC  
Collector Current  
Pulse *  
-1  
M
N
P
0.20 MIN  
1.00+0.20/-0.10  
7
A
ICP  
-2  
IB  
Base Current  
-200  
150  
mA  
M
PC  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature Range  
mW  
Tj  
150  
1. EMITTER  
2. BASE  
Tstg  
-55 150  
3. COLLECTOR  
* Pulse Width = 300 S, Duty Cycle 2%.  
SOT-23  
Marking  
Lot No.  
Type Name  
KMH  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
SYMBOL  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
TEST CONDITION  
MIN.  
TYP.  
MAX. UNIT  
IC=-100 A  
-120  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
IC=-10mA  
-100  
IE=-100 A  
-5  
-
V
VCB=-100V  
-
-
-100  
-100  
-100  
-0.2  
-0.3  
-1.1  
-1.0  
-
nA  
nA  
nA  
IEBO  
VEB=-4V  
Emitter Cut-Off Current  
ICES  
VCES=-100V  
Collector-Emitter Cut-Off Current  
-
VCE(sat) (1)  
VCE(sat) (2)  
VBE(sat)  
VBE  
IC=-250mA, IB=-25mA  
IC=-500mA, IB=-50mA  
IC=-500mA, IB=-50mA  
VCE=-5V, IC=-1mA  
VCE=-5V, IC=-1mA  
VCE=-5V, IC=-250mA  
VCE=-5V, IC=-500mA  
VCE=-5V, IC=-1A  
VCE=-10V, IC=-50mA, f=100MHz  
VCB=-10V, f=1MHz  
-
Collector-Emitter Saturation Voltage **  
V
-
Base-Emitter Saturation Voltage **  
Base-Emitter Voltag  
-
V
V
-
hFE(1)  
hFE(2)  
hFE(3)  
hFE(4)  
fT  
100  
100  
100  
50  
50  
-
-
DC Current Gain **  
300  
-
Transition Frequency  
-
MHz  
pF  
Cob  
Collector Output Capacitance  
** Pulse Width = 300 S, Duty Cycle 2%.  
5
2003. 2. 25  
Revision No : 1  
1/2  

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