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KTA1531T PDF预览

KTA1531T

更新时间: 2024-11-16 22:34:39
品牌 Logo 应用领域
KEC 晶体晶体管局域网
页数 文件大小 规格书
3页 83K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

KTA1531T 数据手册

 浏览型号KTA1531T的Datasheet PDF文件第2页浏览型号KTA1531T的Datasheet PDF文件第3页 
SEMICONDUCTOR  
KTA1531T  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
LOW FREQUENCY POWER AMP, CONVERTER  
ELECTRONIC GOVERNOR APPLICATIONS  
E
B
K
FEATURES  
DIM MILLIMETERS  
Low Saturation Voltage  
: VCE(sat)=0.3V(Max.) at IC=0.5A.  
Complementary to KTC3531T.  
_
A
B
2.9+0.2  
1.6+0.2/-0.1  
_
C
D
0.70+0.05  
2
1
3
_
0.4+0.1  
E
F
2.8+0.2/-0.3  
1.9+0.2  
_
G
0.95  
_
H
I
J
K
L
0.16+0.05  
0.00-0.10  
0.25+0.25/-0.15  
0.60  
MAXIMUM RATING (Ta=25)  
0.55  
CHARACTERISTIC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
-30  
UNIT  
V
I
H
J
J
-20  
V
1. EMITTER  
2. BASE  
-5  
V
3. COLLECTOR  
Collector Current  
-1  
A
PC *  
Tj  
Collector Power Dissipation  
Junction Temperature  
0.9  
W
150  
TSM  
Tstg  
Storage Temperature Range  
-55150  
* Package mounted on a ceramic board (600Ὅᴧ0.8)  
Marking  
h
Rank  
FE  
Lot No.  
Type Name  
S A  
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC  
Collector Cut-off Current  
Emitter Cut-off Current  
SYMBOL  
ICBO  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
-0.1  
-0.1  
400  
-
UNIT  
A  
VCB=-20V, IE=0  
-
-
-
IEBO  
VEB=-5V, IC=0  
-
120  
30  
-
A  
hFE(1) (Note)  
hFE(2)  
VCE(sat)  
VBE(sat)  
fT  
VCE=-2V, IC=-50mA  
VCE=-2V, IC=-1A(Pulse)  
IC=-500mA, IB=-50mA  
IC=-500mA, IB=-50mA  
VCE=-10V, IC=-50mA  
VCB=-10V, IE=0, f=1MHz  
-
DC Current Gain  
-
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Transition Frequency  
-0.15  
-0.85  
180  
15  
-0.3  
-1.2  
-
V
V
-
-
MHz  
pF-  
Cob  
Collector Output Capacitance  
-
-
Note : hFE Classification  
Y:120240, GR(G):200400  
2001. 6. 23  
Revision No : 0  
1/2  

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