Datasheet > KTA1531T

KTA1531T

更新时间： 2024-01-11 14:20:19

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
3页	83K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

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中文翻译

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技术参数
数据手册

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KTA1531T 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Base Number Matches：	1

KTA1531T 数据手册

SEMICONDUCTOR

KTA1531T

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

LOW FREQUENCY POWER AMP, CONVERTER

ELECTRONIC GOVERNOR APPLICATIONS

FEATURES

DIM MILLIMETERS

ᴌLow Saturation Voltage

: V_CE(sat)=0.3V(Max.) at I_C=0.5A.

ᴌComplementary to KTC3531T.

2.9+0.2

1.6+0.2/-0.1

0.70+0.05

0.4+0.1

2.8+0.2/-0.3

1.9+0.2

0.95

0.16+0.05

0.00-0.10

0.25+0.25/-0.15

0.60

MAXIMUM RATING (Ta=25ᴱ)

0.55

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

-30

UNIT

-20

1. EMITTER

2. BASE

-5

3. COLLECTOR

Collector Current

-1

P_C*

T_j

Collector Power Dissipation

Junction Temperature

0.9

ᴱ

150

TSM

T_stg

Storage Temperature Range

-55ᴕ150

* Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ)

Marking

Rank

Lot No.

Type Name

S A

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP.

MAX.

-0.1

400

UNIT

ỌA

V_CB=-20V, I_E=0

I_EBO

V_EB=-5V, I_C=0

120

ỌA

h_FE(1) (Note)

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

V_CE=-2V, I_C=-50mA

V_CE=-2V, I_C=-1A(Pulse)

I_C=-500mA, I_B=-50mA

V_CE=-10V, I_C=-50mA

V_CB=-10V, I_E=0, f=1MHz

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

-0.15

-0.85

180

-0.3

-1.2

MHz

pF-

C_ob

Collector Output Capacitance

Note : h_FEClassification

Y:120ᴕ240, GR(G):200ᴕ400

2001. 6. 23

Revision No : 0

1/2

12 3

中文翻译

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