Datasheet > KTA1552T_06

KTA1552T_06

更新时间： 2022-11-13 00:30:05

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
3页	408K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

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数据手册

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KTA1552T_06 数据手册

SEMICONDUCTOR

KTA1552T

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,

MOTOR DRIVERS, STROBES APPLICATION.

FEATURES

DIM MILLIMETERS

Adoption of FBET, MBIT Processes.

High Current Capacitance.

2.9+0.2

1.6+0.2/-0.1

0.70+0.05

Low Collector-to-Emitter Saturation Voltage.

High-Speed Switching.

0.4+0.1

2.8+0.2/-0.3

1.9+0.2

0.95

Ultrasmall Package Facilitates Miniaturization in end Products.

High Allowable Power Dissipation.

Complementary to KTC3552T.

0.16+0.05

0.00-0.10

0.25+0.25/-0.15

0.60

0.55

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

SYMBOL

RATING

-50

UNIT

1. EMITTER

2. BASE

V_CBO

V_CES

V_CEO

V_EBO

I_C

Collector-Base Voltage

-50

3. COLLECTOR

Collector-Emitter Voltage

-50

Emitter-Base Voltage

-6

Collector Current

Pulse

-3

TSM

I_CP

-6

I_B

Base Current

-600

0.9

Marking

P_C*

T_j

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

Lot No.

150

Type Name

T_stg

-55 150

0.8 )

S L

* Package mounted on a ceramic board (600

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

I_EBO

TEST CONDITION

MIN.

TYP. MAX. UNIT

V_CB=-40V, I_E=0

V_EB=-4V, I_C=0

-0.1

Emitter Cut-off Current

-0.1

V_(BR)CBO

V_(BR)CES

V_(BR)CEO

V_(BR)EBO

V_CE(sat)1

V_CE(sat)2

V_BE(sat)

h_FE

Collector-Base Breakdown Voltage

-50

-6

I_C=-10 A, I_E=0

I_C=-100 A, V_BE=0

I_C=-1mA, I_B=0

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter Saturation Voltage

I_E=-10 A, I_C=0

I_C=-1A, I_B=-50mA

I_C=-2A, I_B=-100mA

V_CE=-2V, I_C=-100mA

V_CE=-10V, I_C=-500mA

V_CB=-10V, f=1MHz

-100

-185

-0.88

-200

-500

-1.2

560

Base-Emitter Saturation Voltage

DC Current Gain

200

f_T

Transition Frequency

360

MHz

C_ob

Collector Output Capacitance

PW=20µs

t_on

t_stg

t_f

Turn-On Time

230

DC 1%

OUTPUT

INPUT

Switching

Storage Time

Time

50Ω

100µF

=5V

470µF

=-25V

Fall Time

-10I =10I =I =-1A

2006. 8. 8

Revision No : 1

1/3

12 3

中文翻译

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