SEMICONDUCTOR
KTA1571S
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA
FEATURE
Low Collector-Emitter Saturation Voltage VCE(sat)
High Collector Current Capability : IC and ICP
Higher Efficiency Leading to Less Heat Generation.
.
.
E
L
B
L
DIM MILLIMETERS
_
+
2.93 0.20
A
B
C
D
E
G
H
J
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
2
3
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
1
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
-120
-100
-5
UNIT
V
0.95
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
K
L
V
P
P
M
N
P
0.20 MIN
1.00+0.20/-0.10
7
V
DC
Collector Current
Pulse *
-1
A
M
ICP
-3
IB
Base Current
-300
350
mA
1. EMITTER
2. BASE
PC
Collector Power Dissipation**
Junction Temperature
Storage Temperature Range
mW
3. COLLECTOR
Tj
150
Tstg
-55 150
* Pulse Width = 300 S, Duty Cycle 2%.
** Package Mounted on 99.5% Alumina 10
MARKING
SOT-23
8
0.6mm.
Lot No.
Type Name
KMA
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage **
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
TEST CONDITION
MIN.
TYP.
MAX. UNIT
IC=-100 A
-120
-
-
-
-
V
V
IC=-1mA
-100
IE=-100 A
-5
-
-
V
VCB=-80V, IE=0A
VEB=-4V, IC=0A
-
-
-100
-100
-100
-0.12
-0.18
-0.32
-1.1
-1.0
-
nA
nA
nA
IEBO
Emitter Cut-Off Current
-
-
ICES
VCES=-80V, VBE=0V
IC=-250mA, IB=-25mA
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
IC=-1A, IB=-100mA
VCE=-5V, IC=-1A
VCE=-5V, IC=-1mA
VCE=-5V, IC=-250mA
VCE=-5V, IC=-500mA
VCE=-5V, IC=-1A
VCE=-10V, IC=-50mA, f=100MHz
VCB=-10V, f=1MHz
Collector-Emitter Cut-Off Current
-
-
-
VCE(sat) (1)
VCE(sat) (2)
VCE(sat) (3)
VBE(sat)
VBE
-
Collector-Emitter Saturation Voltage **
-
-
V
-
-
Base-Emitter Saturation Voltage **
Base-Emitter Voltag
-
-
V
V
-
-
hFE(1)
hFE(2)
hFE(3)
hFE(4)
fT
150
150
150
125
100
-
-
-
-
DC Current Gain **
-
450
-
-
Transition Frequency
-
-
MHz
pF
Cob
Collector Output Capacitance
** Pulse Width = 300 S, Duty Cycle 2%.
17
-
2010. 2. 24
Revision No :3
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