Datasheet > KTA1543T

KTA1543T

更新时间： 2024-09-27 03:48:55

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
3页	89K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

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中文翻译

获取价格

数据手册

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KTA1543T 数据手册

SEMICONDUCTOR

KTA1543T

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

RELAY DRIVERS, LAMP DRIVERS,

MOTOR DRIVERS, STROBES APPLICATION.

FEATURES

DIM MILLIMETERS

ᴌAdoption of MBIT Processes.

ᴌHigh Current Capacitance.

2.9+0.2

1.6+0.2/-0.1

0.70+0.05

ᴌLow Collector-to-Emitter Saturation Voltage.

ᴌHigh-Speed Switching.

0.4+0.1

2.8+0.2/-0.3

1.9+0.2

0.95

ᴌUltrasmall-sized Package Permitting Applied sets to

be made small and slim.

0.16+0.05

0.00-0.10

0.25+0.25/-0.15

0.60

ᴌHigh Allowable Power Dissipation.

ᴌComplementary to KTC3543T.

0.55

MAXIMUM RATING (Ta=25ᴱ)

1. EMITTER

2. BASE

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

-30

UNIT

3. COLLECTOR

-30

-6

-5

TSM

Collector Current

I_CP

Pulse

-7

I_B

Base Current

-1.2

0.9

Marking

P_C*

T_j

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

ᴱ

Lot No.

150

T_stg

-55ᴕ150

Type Name

S J

* Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ)

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP. MAX. UNIT

V_CB=-30V, I_E=0

-0.1

ỌA

I_EBO

V_EB=-4V, I_C=0

Emitter Cut-off Current

-0.1

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

V_CE(sat)

V_BE(sat)

h_FE

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

DC Current Gain

I_C=-10ỌA, I_E=0

-30

-6

I_C=-1mA, I_B=0

I_E=-10ỌA, I_C=0

I_C=-2.5A, I_B=-50mA

V_CE=-2V, I_C=-500mA

V_CE=-10V, I_C=-500mA

V_CB=-10V, f=1MHz

-140

-0.81

-210

-1.2

560

200

f_T

Transition Frequency

250

MHz

C_ob

Collector Output Capacitance

PW=20µs

t_on

t_stg

t_f

Turn-On Time

190

DC 1%

OUTPUT

INPUT

Swiitching

Storage Time

Time

50Ω

100µF

=5V

470µF

=-12V

Fall Time

-20I =20I =I =-2.5A

2001. 6. 29

Revision No : 0

1/3

12 3

中文翻译

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