SEMICONDUCTOR
KTA1532U
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA
LOW FREQUENCY AMPLIFIER DRIVER
E
M
B
M
FEATURES
· A Collector Current is large.
· Collector Saturation Voltage is low.
D
2
V
CE(sat) ≤ -200mV at IC=500mA, ID=-25mA.
1
3
· Suffix U : Qualified to AEC-Q101.
ex) KTA1532U-RTK/HU
DIM MILLIMETERS
_
+
2.00 0.20
A
B
C
D
E
_
1.25+0.15
_
+
0.90 0.10
0.3+0.10/-0.05
_
+
2.10 0.20
H
G
H
J
K
L
0.65
0.15+0.1/-0.06
1.30
MAXIMUM RATING (Ta=25℃)
K
N
N
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
RATING
-15
UNIT
V
0.00~0.10
0.70
VCBO
VCEO
VEBO
IC
1. EMITTER
2. BASE
_
+
M
N
0.42 0.10
0.10 Min.
-12
V
3. COLLECTOR
-6
V
DC
-1.5
USM
Collector Current
A
ICP
Pulse
-3
PC*
Tj
Collector Power Dissipation
Junction Temperature
0.2
W
℃
℃
MARKING
150
Tstg
Type Name
Storage Temperature Range
-55∼ 150
* Package Mounted on a Ceramic Board ( 600mm2×0.8mm)
Lot No.
2A
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
SYMBOL
ICBO
TEST CONDITION
MIN.
TYP. MAX. UNIT
VCB=-15V, IE=0
-
-
-
-0.1
μA
μA
V
IEBO
VEB=-6V, IC=0
-
-0.1
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
hFE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
DC Current Gain
IC=-10μA, IE=0
-15
-12
-6
-
-
-
-
IC=-1mA, IB=0
-
V
IE=-10μA, IC=0
-
-
-200
680
-
V
IC=-500mA, IB=-25mA
VCE=-2V, IC=-200mA
VCE=-2V, IE=200mA, f=100MHz*
VCB=-10V, f=1MHz
-110
-
mV
270
-
fT
Transition Frequency
400
12
MHz
pF
Cob
Collector Output Capacitance
*Pulsed
-
-
2020. 10. 05
Revision No : 2
1/2