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KTA1532U PDF预览

KTA1532U

更新时间: 2024-11-18 17:15:15
品牌 Logo 应用领域
KEC /
页数 文件大小 规格书
2页 82K
描述
USM

KTA1532U 数据手册

 浏览型号KTA1532U的Datasheet PDF文件第2页 
SEMICONDUCTOR  
KTA1532U  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
LOW FREQUENCY AMPLIFIER DRIVER  
E
M
B
M
FEATURES  
· A Collector Current is large.  
· Collector Saturation Voltage is low.  
D
2
V
CE(sat) -200mV at IC=500mA, ID=-25mA.  
1
3
· Suffix U : Qualified to AEC-Q101.  
ex) KTA1532U-RTK/HU  
DIM MILLIMETERS  
_
+
2.00 0.20  
A
B
C
D
E
_
1.25+0.15  
_
+
0.90 0.10  
0.3+0.10/-0.05  
_
+
2.10 0.20  
H
G
H
J
K
L
0.65  
0.15+0.1/-0.06  
1.30  
MAXIMUM RATING (Ta=25)  
K
N
N
CHARACTERISTIC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
SYMBOL  
RATING  
-15  
UNIT  
V
0.00~0.10  
0.70  
VCBO  
VCEO  
VEBO  
IC  
1. EMITTER  
2. BASE  
_
+
M
N
0.42 0.10  
0.10 Min.  
-12  
V
3. COLLECTOR  
-6  
V
DC  
-1.5  
USM  
Collector Current  
A
ICP  
Pulse  
-3  
PC*  
Tj  
Collector Power Dissipation  
Junction Temperature  
0.2  
W
MARKING  
150  
Tstg  
Type Name  
Storage Temperature Range  
-55150  
* Package Mounted on a Ceramic Board ( 600mm2×0.8mm)  
Lot No.  
2A  
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC  
Collector Cut-off Current  
Emitter Cut-off Current  
SYMBOL  
ICBO  
TEST CONDITION  
MIN.  
TYP. MAX. UNIT  
VCB=-15V, IE=0  
-
-
-
-0.1  
μA  
μA  
V
IEBO  
VEB=-6V, IC=0  
-
-0.1  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
VCE(sat)  
hFE  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Saturation Voltage  
DC Current Gain  
IC=-10μA, IE=0  
-15  
-12  
-6  
-
-
-
-
IC=-1mA, IB=0  
-
V
IE=-10μA, IC=0  
-
-
-200  
680  
-
V
IC=-500mA, IB=-25mA  
VCE=-2V, IC=-200mA  
VCE=-2V, IE=200mA, f=100MHz*  
VCB=-10V, f=1MHz  
-110  
-
mV  
270  
-
fT  
Transition Frequency  
400  
12  
MHz  
pF  
Cob  
Collector Output Capacitance  
*Pulsed  
-
-
2020. 10. 05  
Revision No : 2  
1/2  

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