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KSC5305 PDF预览

KSC5305

更新时间: 2024-11-24 23:16:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关高压
页数 文件大小 规格书
6页 105K
描述
High Voltage High Speed Power Switch Application

KSC5305 数据手册

 浏览型号KSC5305的Datasheet PDF文件第2页浏览型号KSC5305的Datasheet PDF文件第3页浏览型号KSC5305的Datasheet PDF文件第4页浏览型号KSC5305的Datasheet PDF文件第5页浏览型号KSC5305的Datasheet PDF文件第6页 
KSC5305D  
High Voltage High Speed Power Switch  
Application  
Equivalent Circuit  
C
Built-in Free-wheeling Diode makes efficient anti saturation operation  
Suitable for half bridge light ballast Applications  
No need to interest an hFE value because of low variable storage-time  
spread even though corner spirit product  
B
TO-220  
1
Low base drive requirement  
1.Base 2.Collector 3.Emitter  
E
NPN Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
800  
400  
12  
Units  
V
V
V
V
Collector Base Voltage  
CBO  
Collector Emitter Voltage  
Emitter Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current (DC)  
V
CEO  
EBO  
V
I
I
I
I
5
A
C
10  
A
CP  
B
2
A
*Base Current (Pulse)  
4
A
BP  
P
Power Dissipation(T =25°C)  
75  
W
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
°C  
STG  
Thermal Characteristics T =25°C unless otherwise noted  
C
Symbol  
Characteristics  
Junction to Case  
Junction to Ambient  
Rating  
1.65  
Unit  
R
R
Thermal Resistance  
°C/W  
θjc  
θja  
62.5  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

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