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KSC5302DTU PDF预览

KSC5302DTU

更新时间: 2024-11-24 23:16:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管高压局域网
页数 文件大小 规格书
6页 103K
描述
High Voltage High Speed Power Switch Application

KSC5302DTU 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.43
其他特性:FREE-WHEELING DIODE最大集电极电流 (IC):2 A
集电极-发射极最大电压:400 V配置:SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE):10JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):50 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

KSC5302DTU 数据手册

 浏览型号KSC5302DTU的Datasheet PDF文件第2页浏览型号KSC5302DTU的Datasheet PDF文件第3页浏览型号KSC5302DTU的Datasheet PDF文件第4页浏览型号KSC5302DTU的Datasheet PDF文件第5页浏览型号KSC5302DTU的Datasheet PDF文件第6页 
KSC5302D  
Equivalent Circuit  
C
High Voltage High Speed Power Switch  
Application  
High Breakdown Voltage : BV  
=800V  
CBO  
Built-in Free-wheeling Diode makes efficient anti saturation operation  
Suitable for half bridge light ballast Applications  
No need to interest an h value because of low variable storage-time  
B
FE  
TO-220  
1
spread  
E
Even though corner spirit product  
Low base drive requirement  
1.Base 2.Collector 3.Emitter  
NPN Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
800  
400  
12  
2
Units  
V
V
V
V
Collector-Base Voltage  
CBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current (DC)  
V
CEO  
EBO  
V
I
I
I
I
A
C
5
A
CP  
B
1
A
*Base Current (Pulse)  
2
A
BP  
P
Power Dissipation(T =25°C)  
50  
150  
W
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
J
- 55 ~ 150  
°C  
STG  
Thermal Characteristics T =25°C unless otherwise noted  
C
Symbol  
Characteristics  
Junction to Case  
Junction to Ambient  
Rating  
2.5  
Unit  
R
R
Thermal Resistance  
°C/W  
θjc  
θja  
62.5  
©2002 Fairchild Semiconductor Corporation  
Rev. B1, December 2002  

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