Datasheet > KSC5302DJ69Z

KSC5302DJ69Z

更新时间： 2024-01-02 17:35:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		局域网开关晶体管
页数	文件大小	规格书
6页	101K
描述
Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

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技术参数
数据手册

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KSC5302DJ69Z 技术参数

生命周期：	Obsolete	零件包装代码：	SFM
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.76
Is Samacsys：	N	最大集电极电流 (IC)：	2 A
集电极-发射极最大电压：	400 V	配置：	SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE)：	10	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

KSC5302DJ69Z 数据手册

KSC5302D

Equivalent Circuit

High Voltage High Speed Power Switch

Application

•

High Breakdown Voltage : BV

=800V

CBO

Built-in Free-wheeling Diode makes efficient anti saturation operation

Suitable for half bridge light ballast Applications

No need to interest an h value because of low variable storage-time

TO-220

spread

•

Even though corner spirit product

Low base drive requirement

1.Base 2.Collector 3.Emitter

NPN Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

800

400

Units

Collector-Base Voltage

CBO

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

*Collector Current (Pulse)

Base Current (DC)

CEO

EBO

*Base Current (Pulse)

Power Dissipation(T =25°C)

150

°C

Junction Temperature

Storage Temperature

- 55 ~ 150

°C

STG

Thermal Characteristics ^{T =25°C unless otherwise noted}

Symbol

Characteristics

Junction to Case

Junction to Ambient

Rating

2.5

Unit

Thermal Resistance

°C/W

θjc

θja

62.5

Rev. A1, June 2001

12 3 4 5 6

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