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KSC5030R PDF预览

KSC5030R

更新时间: 2024-11-22 06:43:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
6页 86K
描述
Power Bipolar Transistor, 6A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN

KSC5030R 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-3P包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
风险等级:5.89其他特性:HIGH RELIABILITY
最大集电极电流 (IC):6 A集电极-发射极最大电压:800 V
配置:SINGLE最小直流电流增益 (hFE):8
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):100 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):15 MHz

KSC5030R 数据手册

 浏览型号KSC5030R的Datasheet PDF文件第2页浏览型号KSC5030R的Datasheet PDF文件第3页浏览型号KSC5030R的Datasheet PDF文件第4页浏览型号KSC5030R的Datasheet PDF文件第5页浏览型号KSC5030R的Datasheet PDF文件第6页 
KSC5030  
High Voltage and High Reliabilty  
High Speed Switching  
Wide SOA  
TO-3P  
1.Base 2.Collector 3.Emitter  
1
NPN Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
1100  
V
V
CBO  
CEO  
EBO  
800  
V
7
V
I
I
I
6
20  
A
C
A
CP  
B
3
A
P
T
T
Collector Dissipation (T =25°C)  
100  
W
°C  
°C  
C
C
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max. Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Sustaining Voltage  
I
I
= 1mA, I = 0  
1100  
800  
7
V
V
V
V
CBO  
CEO  
EBO  
C
C
E
BV  
BV  
= 5mA, I = 0  
B
I = 1mA, I = 0  
E
C
V
(sus)  
I
= 3A, I = -I = 0.6A  
800  
CEX  
C
B1  
B2  
L = 1mH, Clamped  
I
I
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
V
V
= 800V, I = 0  
10  
10  
40  
µA  
µA  
CBO  
EBO  
CB  
EB  
E
= 5V, I = 0  
C
h
h
V
V
= 5V, I = 0.4A  
10  
8
FE1  
FE2  
CE  
CE  
C
= 5V, I = 2A  
C
V
V
(sat)  
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Output Capacitance  
I
I
= 3A, I = 0.6A  
2
V
V
CE  
C
C
B
= 3A, I = 0.6A  
1.5  
BE  
B
C
V
= 10V, I = 0, f = 1MHz  
120  
15  
pF  
MHz  
µs  
ob  
CB  
E
f
t
t
t
Current Gain Bandwidth Product  
Turn ON Time  
V
V
I
= 10V, I = 0.4A  
T
CE  
CC  
C
= 400V  
0.5  
3
ON  
= 51 = -2.5I = 4A  
Storage Time  
C
B1 B2  
µs  
STG  
F
R = 100Ω  
L
Fall Time  
0.3  
µs  
h
Classificntion  
FE  
Classification  
N
R
O
h
10 ~ 20  
15 ~ 30  
20 ~ 40  
FE1  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

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