是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-3P | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.89 | 其他特性: | HIGH RELIABILITY |
最大集电极电流 (IC): | 6 A | 集电极-发射极最大电压: | 800 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 8 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 100 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 15 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSC5030RTU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 6A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSC5031 | ISC |
获取价格 |
isc Silicon NPN Power Transistor | |
KSC5031N | ISC |
获取价格 |
Transistor | |
KSC5031O | ISC |
获取价格 |
Transistor | |
KSC5039 | ISC |
获取价格 |
isc Silicon NPN Power Transistor | |
KSC5039 | FAIRCHILD |
获取价格 |
High Voltage Power Switch Switching Application | |
KSC5039F | FAIRCHILD |
获取价格 |
High Voltage Power Switch Switching Application | |
KSC5039FTU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSC5039H1 | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSC5039H1TU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |