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KSC5042F PDF预览

KSC5042F

更新时间: 2024-09-16 22:36:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 高压
页数 文件大小 规格书
4页 58K
描述
High Voltage Switchihg Dynamic Focus Application

KSC5042F 数据手册

 浏览型号KSC5042F的Datasheet PDF文件第2页浏览型号KSC5042F的Datasheet PDF文件第3页浏览型号KSC5042F的Datasheet PDF文件第4页 
KSC5042F  
High Voltage Switchihg Dynamic Focus  
Application  
High Collector-Emitter Breakdown Voltage : BV  
=900V  
CEO  
Small C =2.8pF (Typ.)  
ob  
Wide S.O.A  
High reliability  
TO-220F  
1.Base 2.Collector 3.Emitter  
1
NPN Triple Diffused Planar Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
1500  
900  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
V
V
CBO  
CEO  
EBO  
5
V
I
I
100  
mA  
mA  
W
C
300  
CP  
P
Collector Dissipation (T =25°C)  
6
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
°C  
°C  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
I
= 1mA, I = 0  
1500  
900  
5
CBO  
CEO  
EBO  
C
C
E
BV  
BV  
= 5mA, I = 0  
V
B
I = 1mA, I = 0  
V
E
C
I
I
V
= 900V, I = 0  
10  
10  
µA  
µA  
CBO  
EBO  
CB  
EB  
CE  
E
Emitter Cut-off Current  
V
V
= 4V, I = 0  
C
h
DC Current Gain  
= 5V, I = 10mA  
30  
FE  
C
V
V
(sat)  
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Output Capacitance  
I
I
= 20mA, I = 4mA  
5
2
V
V
CE  
C
C
B
= 20mA, I = 4mA  
BE  
B
C
V
= 100V, f = 1MHz  
CB  
2.8  
pF  
ob  
©2002 Fairchild Semiconductor Corporation  
Rev. B, December 2002  

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