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KSC5054R PDF预览

KSC5054R

更新时间: 2024-11-25 19:56:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
5页 49K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, IPAK-3

KSC5054R 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-251包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.92最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):10JEDEC-95代码:TO-251
JESD-30 代码:R-PSIP-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):10 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):3500 ns最大开启时间(吨):1000 ns
Base Number Matches:1

KSC5054R 数据手册

 浏览型号KSC5054R的Datasheet PDF文件第2页浏览型号KSC5054R的Datasheet PDF文件第3页浏览型号KSC5054R的Datasheet PDF文件第4页浏览型号KSC5054R的Datasheet PDF文件第5页 
KSC5054  
High Speed High Voltage Switching  
Industrial Use  
1
I-PAK  
1. Base 2. Collector 3. Emitter  
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Base Current  
500  
V
V
CBO  
CEO  
EBO  
400  
7
V
I
I
I
0.25  
A
B
Collector Current (DC)  
*Collector Current (Pulse)  
0.5  
A
C
1
A
CP  
P
Collector Dissipation (T =25°C)  
1
10  
W
W
°C  
°C  
C
a
P
T
T
Collector Dissipation (T =25°C)  
C
C
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
* PW300µs, Duty Cycle10%  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
400  
450  
Max.  
Units  
V
V
(sus)  
Collector-Emitter Sustaining Voltage  
Collector-Emitter Sustaining Voltage  
I
I
= 0.3A, I = 0.06A, L = 10mH  
V
V
CEO  
C
C
B1  
(sus)1  
= 0.3A, I = -I = 0.06A  
B1 B2  
CEX  
V
(off) = -5V, L = 10mH  
BE  
V
(sus)2  
Collector-Emitter Sustaining Voltage  
I
= 0.6A, I = 0.2, L = 10mH  
400  
V
CEX  
C
B1  
I 2 = -0.06, V (off) = -5V  
B
BE  
I
I
Collector Cut-off Current  
Collector Cut-off Current  
Emitter Cut-off Current  
Collector Cut-off Current  
V
= 400V, I = 0  
10  
1
µA  
mA  
µA  
CBO  
CER  
EBO  
CB  
CE  
EB  
E
V
V
= 400V, R = 51, T = 125°C  
BE C  
I
= 5V, I = 0  
10  
C
I
I
V
V
= 400V, V (off) = -1.5V  
10  
1
µA  
mA  
CEX1  
CEX2  
CE  
BE  
= 400V, V (off) = -1.5V @  
CE  
BE  
T
= 125°C  
C
h
h
DC Current Gain  
V
V
= 5V, I = 0.05A  
20  
10  
80  
FE1  
FE2  
CE  
CE  
C
= 5V, I = 0.3A  
C
V
V
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Turn ON Time  
I
I
= 0.3A, I = 0.06A  
1
1.2  
1
V
V
CE  
BE  
C
C
B
(sat)  
= 0.3A, I = 0.06A  
B
t
t
t
V
= 150V, I = 0.3A  
µs  
µs  
µs  
ON  
CC  
C
I
= -I = 0.06A, R = 500Ω  
Storage Time  
B1  
B2 L  
2.5  
1
STG  
F
PW = 50µs, Duty Cycle2%  
Fall Time  
* Pulse Test: PW350µs, Duty Cycle2% Pulsed  
h
Classification  
FE  
Classification  
R
O
Y
h
20 ~ 40  
30 ~ 60  
40 ~ 80  
FE1  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

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