KSC5200
Audio Power Amplifier
•
•
•
•
High Current Capability : I =13A
High Power Dissipation
Wide S.O.A
C
Complement to KSA1943
TO-264
1.Base 2.Collector 3.Emitter
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
230
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Base Current
V
V
CBO
CEO
EBO
230
5
V
I
I
13
A
C
1.5
A
B
P
Collector Dissipation (T =25°C)
130
W
°C
°C
C
C
T
T
Junction Temperature
Storage Temperature
150
J
- 50 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
BV
Collector-Base Breakdown Voltage
I =5mA, I =0
230
230
5
CBO
CEO
EBO
C
E
BV
BV
Collector-Emitter Breakdown Voltage I =10mA, R =∞
V
C
BE
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
I =5mA, I =0
V
E
C
I
I
V
=230V, I =0
5.0
5.0
uA
uA
CBO
EBO
CB
EB
CE
CE
E
V
V
V
=5V, I =0
C
h
h
* DC Current Gain
=5V, I =1A
55
35
160
FE1
FE2
C
DC Current Gain
=5V, I =7A
60
0.4
1.0
30
C
V
V
(sat)
(on)
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
I =8A, I =0.8A
3.0
1.5
V
V
CE
C
B
V
=5V, I =7A
C
BE
CE
CE
CB
f
V
V
=5V, I =1A
MHz
pF
T
C
C
=10V, f=1MHz
200
ob
* Pulse Test : PW=20us
h
Classification
FE
Classification
R
O
h
55 ~ 110
80 ~ 160
FE1
©2001 Fairchild Semiconductor Corporation
Rev. B1, Septmeber 2001