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KSC5060YJ69Z PDF预览

KSC5060YJ69Z

更新时间： 2024-11-07 21:09:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
2页 35K
描述
Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

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中文翻译

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KSC5060YJ69Z 技术参数

生命周期：Obsolete零件包装代码：SFM
包装说明：TO-220, 3 PIN针数：3
Reach Compliance Code：unknown风险等级：5.84
其他特性：HIGH RELIABILITY最大集电极电流 (IC)：3 A
集电极-发射极最大电压：500 V配置：SINGLE
最小直流电流增益 (hFE)：30JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：18 MHz
Base Number Matches：1

KSC5060YJ69Z 数据手册

 浏览型号KSC5060YJ69Z的Datasheet PDF文件第2页 
KSC5060  
NPN EPITAXIAL SILICON TRANSISTOR  
HIGH VOLTAGE AND HIGH RELIABILITY  
TO-220  
HIGH SPEED SWITCHING: tF = 0.1ms  
· WIDE SOA  
ABSOLUTE MAXIMUM RATINGS  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
800  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
500  
V
7
V
3
A
IC  
6
1
A
1.Base 2.Collector 3.Emitter  
IB  
A
PC  
40  
W
°C  
°C  
Collector Dissipation (TC=25°C)  
Junction Temperature  
Storage Temperature  
TJ  
150  
TSTG  
-55 ~ 150  
ELECTRICAL CHARACTERISTICS (TC =25°C)  
Characteristic  
Symbol  
Test Conditions  
Min  
800  
500  
7
Typ  
Max  
Unit  
V
Collector Base Breakdown Voltage  
Collector Emitter Breakdown Voltage  
Emitter Base Breakdown Voltage  
Collector Emitter Sustaining Voltage  
BVCBO  
IC = 1mA, IE = 0  
BVCEO  
BVEBO  
VCEX(s)  
V
IC = 5mA, RBE =¥  
IE = 1mA, IC = 0  
V
500  
V
IC = 1.5A, IB1 = -IB2 = 0.6A  
L = 2mH, Clamped  
VCB = 500V, IE = 0  
VEB = -5V, IC = 0  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
ICBO  
IEBO  
10  
10  
50  
mA  
mA  
hFE  
hFE  
1
2
15  
8
VCE = 5V, IC = 0.3A  
VCE = 5V, IC = 1.5A  
IC = 1.5A, IB = 0.3A  
IC = 1.5A, IB = 0.3A  
VCB = 10V, f=1MHz  
VCE=10v, IC=0.3A  
VCC = 200V  
Collector Emitter Saturation Voltage  
Base Emitter Saturation Voltage  
Collector Output Capacitance  
Current Gain Bandwidth Product  
Turn On Time  
VCE(sat)  
VBE(sat)  
COB  
1
V
V
1.5  
50  
18  
pF  
MHz  
ms  
fT  
tON  
0.5  
3
Storage Time  
tSTG  
5 · IB1 = -2.5 · IB2 = IC = 2A  
RL = 100W  
ms  
Fall Time  
tF  
0.3  
ms  
hFE(1) CLASSIFICATION  
Classification  
hFE  
R
O
Y
1
15 ~ 30  
20 ~ 40  
30 ~ 50  
Rev. B  
ã
1999 Fairchild Semiconductor Corporation  
12

中文翻译

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与KSC5060YJ69Z相关器件

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KSC5061 SAMSUNG

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 		Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSC5061 FAIRCHILD

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 		Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSC5061J69Z FAIRCHILD

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 		Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSC5061O FAIRCHILD

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 		Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSC5061-O SAMSUNG

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 		Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSC5061OJ69Z FAIRCHILD

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 		Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSC5061-R SAMSUNG

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 		Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSC5061RJ69Z FAIRCHILD

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 		Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSC5061Y FAIRCHILD

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 		Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSC5061-Y SAMSUNG

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 		Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

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