Datasheet > KSC5061OJ69Z

KSC5061OJ69Z

更新时间： 2024-01-11 01:24:52

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		局域网开关晶体管
页数	文件大小	规格书
2页	35K
描述
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

KSC5061OJ69Z 技术参数

生命周期：	Obsolete	零件包装代码：	SFM
包装说明：	TO-220, 3 PIN	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.84
其他特性：	HIGH RELIABILITY	最大集电极电流 (IC)：	5 A
集电极-发射极最大电压：	500 V	配置：	SINGLE
最小直流电流增益 (hFE)：	20	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	18 MHz
Base Number Matches：	1

KSC5061OJ69Z 数据手册

KSC5061

NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE AND HIGH RELIABILITY

HIGH SPEED SWITCHING: t_F= 0.1ms

· WIDE SOA

TO-220

ABSOLUTE MAXIMUM RATINGS

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

Symbol

V_CBO

Rating

Unit

800

V_CEO

V_EBO

I_C

500

I_C

I_B

P_C

°C

1.Base 2.Collector 3.Emitter

Collector Dissipation (T_C=25°C)

Junction Temperature

Storage Temperature

T_J

150

T_STG

-55 ~ 150

ELECTRICAL CHARACTERISTICS (T_C=25°C)

Characteristic

Symbol

BV_CBO

Test Conditions

Min

800

500

Typ

Max

Unit

Collector Base Breakdown Voltage

Collector Emitter Breakdown Voltage

Emitter Base Breakdown Voltage

Collector Emitter Sustaining Voltage

I_C= 1mA, I_E= 0

BV_CEO

BV_EBO

V_CEX(s)

I_C= 5mA, R_BE=¥

I_E= 1mA, I_C= 0

500

I_C= 2.5A, I_B1 = -I_B2 =1A

L = 1mH, Clamped

V_CB= 500V, I_E= 0

V_EB= 5V, I_C= 0

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

I_CBO

I_EBO

h_FE

V_CE= 5V, I_C= 0.6A

V_CE= 5V, I_C= 3A

I_C= 3A, I_B= 0.6A

V_CB= 10V, f=1MHz

V_CE=10V, I_C=0.6A

V_CC= 200V

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

Collector Output Capacitance

Current Gain Bandwidth Product

Turn On Time

V_CE(sat)

V_BE(sat)

C_OB

1.5

MHz

f_T

t_ON

0.5

Storage Time

t_STG

5 · I_B1 = -2.5 · I_B2 = I_C= 4A

R_L= 50W

Fall Time

t_F

0.3

h_FE(1) CLASSIFICATION

Classification

h_FE

15 ~ 30

20 ~ 40

30 ~ 50

Rev. B

1999 Fairchild Semiconductor Corporation

下载PDF

与KSC5061OJ69Z相关器件

型号	品牌	描述	获取价格	数据表
KSC5061-R	SAMSUNG	Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast	获取价格
KSC5061RJ69Z	FAIRCHILD	Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast	获取价格
KSC5061Y	FAIRCHILD	Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast	获取价格
KSC5061-Y	SAMSUNG	Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast	获取价格
KSC5086	ISC	isc Silicon NPN Power Transistor	获取价格
KSC5086	FAIRCHILD	HIgh Definition Color Display Horizontal Deflection Output (Damper Diode Built In)	获取价格