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KSC5054-R PDF预览

KSC5054-R

更新时间: 2024-11-08 06:36:23
品牌 Logo 应用领域
三星 - SAMSUNG 开关晶体管
页数 文件大小 规格书
3页 143K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, IPAK-3

KSC5054-R 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.92
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):20
JESD-30 代码:R-PSIP-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:NPN功耗环境最大值:10 W
最大功率耗散 (Abs):10 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):3500 ns
最大开启时间(吨):1000 nsVCEsat-Max:1 V

KSC5054-R 数据手册

 浏览型号KSC5054-R的Datasheet PDF文件第2页浏览型号KSC5054-R的Datasheet PDF文件第3页 

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