是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.92 |
最大集电极电流 (IC): | 0.5 A | 集电极-发射极最大电压: | 400 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 20 |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | NPN | 功耗环境最大值: | 10 W |
最大功率耗散 (Abs): | 10 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 3500 ns |
最大开启时间(吨): | 1000 ns | VCEsat-Max: | 1 V |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSC5054RTU | FAIRCHILD |
获取价格 |
暂无描述 | |
KSC5054YTU | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-251 | |
KSC5060 | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSC5060 | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSC5060J69Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSC5060O | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSC5060R | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSC5060-R | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSC5060RJ69Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSC5060Y | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |