KSC5054RTU

更新时间： 2024-02-02 01:09:58

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体开关小信号双极晶体管高压
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5页	53K
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KSC5054RTU 数据手册

KSC5054

High Speed High Voltage Switching

Industrial Use

I-PAK

1. Base 2. Collector 3. Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings T =25°C unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Base Current

500

CBO

CEO

EBO

400

0.25

Collector Current (DC)

*Collector Current (Pulse)

0.5

Collector Dissipation (T =25°C)

°C

Collector Dissipation (T =25°C)

Junction Temperature

150

Storage Temperature

- 55 ~ 150

STG

* PW≤300µs, Duty Cycle≤10%

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

400

450

Max.

Units

(sus)

Collector-Emitter Sustaining Voltage

= 0.3A, I = 0.06A, L = 10mH

CEO

(sus)1

= 0.3A, I = -I = 0.06A

B1 B2

CEX

(off) = -5V, L = 10mH

(sus)2

Collector-Emitter Sustaining Voltage

= 0.6A, I = 0.2, L = 10mH

400

CEX

I 2 = -0.06, V (off) = -5V

Collector Cut-off Current

Emitter Cut-off Current

Collector Cut-off Current

= 400V, I = 0

µA

CBO

CER

EBO

= 400V, R = 51Ω, T = 125°C

BE C

= 5V, I = 0

= 400V, V (off) = -1.5V

µA

CEX1

CEX2

= 400V, V (off) = -1.5V @

= 125°C

DC Current Gain

= 5V, I = 0.05A

FE1

FE2

= 5V, I = 0.3A

(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Turn ON Time

= 0.3A, I = 0.06A

1.2

(sat)

= 0.3A, I = 0.06A

= 150V, I = 0.3A

µs

= -I = 0.06A, R = 500Ω

Storage Time

B2 L

2.5

STG

PW = 50µs, Duty Cycle≤2%

Fall Time

* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed

Classification

20 ~ 40

30 ~ 60

40 ~ 80

FE1

Rev. A1, June 2001

12 3 4 5

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