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KSC5088 PDF预览

KSC5088

更新时间: 2024-02-25 02:55:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体显示器晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
7页 76K
描述
High Definition Color Display Horizontal Deflection Output

KSC5088 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown风险等级:5.77
外壳连接:ISOLATED最大集电极电流 (IC):8 A
集电极-发射极最大电压:800 V配置:SINGLE
最小直流电流增益 (hFE):5JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:50 W
最大功率耗散 (Abs):50 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHz最大关闭时间(toff):3200 ns
VCEsat-Max:5 VBase Number Matches:1

KSC5088 数据手册

 浏览型号KSC5088的Datasheet PDF文件第2页浏览型号KSC5088的Datasheet PDF文件第3页浏览型号KSC5088的Datasheet PDF文件第4页浏览型号KSC5088的Datasheet PDF文件第5页浏览型号KSC5088的Datasheet PDF文件第6页浏览型号KSC5088的Datasheet PDF文件第7页 
KSC5088  
High Definition Color Display Horizontal  
Deflection Output  
High Collector -Base Voltage : V  
=1500V  
CBO  
High Speed Switching: t = 0.1µs (Typ.)  
F
TO-3PF  
1.Base 2.Collector 3.Emitter  
1
NPN Triple Diffused Planar Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
1500  
V
V
CBO  
CEO  
EBO  
800  
6
V
I
I
I
8
A
C
15  
A
CP  
B
4
50  
A
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
Test Condition  
Min. Typ. Max. Units  
I
I
V
V
=800V, I = 0  
10  
1
µA  
CBO  
EBO  
CB  
E
= 4V, I = 0  
mA  
EB  
C
h
h
V
V
=5V, I = 1A  
8
5
FE1  
FE2  
CE  
CE  
C
=5V, I = 6A  
C
V
V
(sat)  
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current-Gain Bandwidth Product  
Storage Time  
I
I
= 6A , I = 1.5A  
5.0  
1.5  
V
V
CE  
C
C
B
= 6A , I = 1.5A  
BE  
B
f
t
t
V
V
= 10V, I = 1A  
3
MHz  
µs  
T
CE  
C
= 200V, I = 6A, R =33.3Ω  
3.0  
0.2  
STG  
F
CC  
C
L
I
= 1.2A, I = -2.4A  
B2  
Fall Time  
B1  
µs  
Thermal Characteristics T =25°C unless otherwise noted  
C
Symbol  
Characteristic  
Max  
Unit  
R
Thermal Resistance, Junction to Case  
2.49  
°C/ W  
θjC  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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