Datasheet > KSC5089

KSC5089

更新时间： 2024-11-07 11:31:47

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	98K
描述
isc Silicon NPN Power Transistor

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中文翻译

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技术参数
数据手册

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KSC5089 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

KSC5089 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

KSC5089

DESCRIPTION

·High Collector-Base Voltage-

: V_CBO= 1500V(Min)

·High Switching Speed

APPLICATIONS

·Designed for use in high definition color display

horizontal deflection output application.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

1500

800

UNIT

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

I_CM

I_B

Collector Power Dissipation

@ T_C=25℃

P_C

150

-55~150

℃

T_J

Junction Temperature

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance, Junction to Case

0.83

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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