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KSC5031 PDF预览

KSC5031

更新时间: 2024-11-25 05:41:03
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管开关局域网
页数 文件大小 规格书
2页 113K
描述
isc Silicon NPN Power Transistor

KSC5031 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

KSC5031 数据手册

 浏览型号KSC5031的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
KSC5031  
DESCRIPTION  
·High Breakdown Voltage-  
: V(BR)CBO= 1100V(Min)  
·Fast Switching speed  
·Wide Area of Safe Operation  
·High Reliability  
APPLICATIONS  
·Designed for switching regulator Applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
1100  
800  
7
UNIT  
V
V
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current-Continuous  
8
A
ICM  
25  
A
IB  
4
A
Collector Power Dissipation  
@ TC=25℃  
PC  
140  
150  
-55~150  
W
TJ  
Junction Temperature  
Storage Temperature Range  
Tstg  
isc Websitewww.iscsemi.cn  

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