Datasheet > KSC5039H2TU

KSC5039H2TU

更新时间： 2024-11-22 08:35:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	85K
描述
Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

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KSC5039H2TU 数据手册

KSC5039

High Voltage Power Switch Switching

Application

TO-220

1.Base 2.Collector 3.Emitter

NPN Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

800

CBO

CEO

EBO

400

Collector Dissipation (T =25°C)

°C

Junction Temperature

Storage Temperature

150

- 65 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

Test Condition

Min.

Typ.

Max.

Units

= 1mA, I = 0

800

400

CBO

CEO

EBO

= 5mA, I = 0

= 1mA, I =0

= 500V, I = 0

µA

CBO

EBO

= 7V, I = 0

* DC Current Gain

= 5V, I = 0.3A

(sat)

* Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

= 2.5A, I = 0.5A

1.5

2.0

= 2.5A, I = 0.5A

= 5V, I = 0.1A

MHz

µs

= 10V , f = 1MHz

Turn ON Time

=150V, I = 2.5A

= -I = 0.5A

Storage Time

µs

STG

R = 60Ω

Fall Time

0.8

µs

* Plus test: PW=300µs, Duty Cycle=2% Pulsed

Rev. A, February 2000

12 3 4 5 6

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