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KSC5039TU PDF预览

KSC5039TU

更新时间: 2024-11-21 13:01:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关电源开关高压
页数 文件大小 规格书
5页 57K
描述
Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

KSC5039TU 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SFM包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.79最大集电极电流 (IC):5 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):10JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):70 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):10 MHzBase Number Matches:1

KSC5039TU 数据手册

 浏览型号KSC5039TU的Datasheet PDF文件第2页浏览型号KSC5039TU的Datasheet PDF文件第3页浏览型号KSC5039TU的Datasheet PDF文件第4页浏览型号KSC5039TU的Datasheet PDF文件第5页 
KSC5039  
High Voltage Power Switch Switching  
Application  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
800  
V
V
CBO  
CEO  
EBO  
400  
7
V
I
I
5
A
C
10  
A
CP  
B
I
3
70  
A
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
I
I
I
= 1mA, I = 0  
800  
400  
7
V
V
CBO  
CEO  
EBO  
C
C
C
E
BV  
BV  
= 5mA, I = 0  
B
= 1mA, I =0  
C
I
I
V
V
V
= 500V, I = 0  
10  
10  
µA  
µA  
CBO  
EBO  
CB  
EB  
CE  
E
= 7V, I = 0  
C
h
* DC Current Gain  
= 5V, I = 0.3A  
10  
FE  
C
V
V
(sat)  
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I
I
= 2.5A, I = 0.5A  
1.5  
2.0  
V
V
CE  
C
C
B
= 2.5A, I = 0.5A  
BE  
B
f
V
V
V
= 5V, I = 0.1A  
10  
40  
MHz  
pF  
µs  
T
CE  
CB  
CC  
C
C
= 10V , f = 1MHz  
ob  
t
t
t
Turn ON Time  
=150V, I = 2.5A  
1
3
ON  
C
I
= -I = 0.5A  
Storage Time  
B1  
B2  
µs  
STG  
F
R = 60Ω  
L
Fall Time  
0.8  
µs  
* Plus test: PW=300µs, Duty Cycle=2% Pulsed  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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