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KSC5039 PDF预览

KSC5039

更新时间: 2024-11-25 05:41:03
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 107K
描述
isc Silicon NPN Power Transistor

KSC5039 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.56
Base Number Matches:1

KSC5039 数据手册

 浏览型号KSC5039的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
KSC5039  
DESCRIPTION  
·Collector-Emitter Breakdown Voltage-  
: V(BR)CEO = 400V(Min)  
·High Switching Speed  
·Wide Area of Safe Operation  
APPLICATIONS  
·Designed for switching regulator and general purpose  
applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
V
800  
400  
V
7
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current-Continuous  
5
10  
A
ICM  
A
IB  
3
A
Collector Power Dissipation  
@ TC=25℃  
PC  
70  
W
TJ  
Junction Temperature  
150  
-65~150  
Storage Temperature Range  
Tstg  
isc Websitewww.iscsemi.cn  

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