Datasheet > KI3419P

KI3419P

更新时间： 2024-06-27 12:13:12

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
1页	343K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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KI3419P 数据手册

SMD Type

MOSFET

P-Channel MOSFET

KI3419P

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● V^{DS (V)}=-12V

● ID =-4.1 A (VGS =-4.5V)

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

● R^DS(ON)＜ 45mΩ (VGS =-4.5V)

● R^DS(ON)＜ 60mΩ (VGS =-2.5V)

1.9

1. Gate

2. Source

3. Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

-12

Unit

Gate-Source Voltage

±12

-4.1

Continuous Drain Current

Power Dissipation

1.4

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Case

Junction Temperature

thJA

thJC

125

℃/W

150

℃

Junction Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-12

Typ

Max

Unit

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

DSS

=-250uA, VGS=0V

DS=-12V, VGS=0V

DS=0V, VGS=±12V

DSS

GSS

-10

±100

-1

GS(th)

-0.4

DS=VGS, ID=-250μA

GS=-4.5V, I

GS=-2.5V, I

=-4.1A

=-3A

Static Drain-Source On-Resistance

Diode Forward Voltage

RDS(On)

mΩ

=-1A,VGS=0V

-1.15

■ Marking

Marking

T3419

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