Datasheet > KI4300DY

KI4300DY

更新时间： 2024-09-13 12:04:27

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	329K
描述
TrenchFET Power MOSFET LITTLE FOOT PlusTM Integrated Schottky PWM Optimized

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中文翻译

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数据手册

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KI4300DY 数据手册

SSMMDD TTyyppee

MOSFIECT

Product specification

KI4300DY

Features

TrenchFET Power MOSFET

LITTLE FOOT Plus^TMIntegrated Schottky

PWM Optimized

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage (MOSFET)

Reverse Voltage (Schottky)

Symbol

V^DS

10 secs

Steady State

Unit

V^DA

Gate-Source Voltage

V^GS

6.4

5.1

Continuous Drain Current (TJ = 150 ) TA = 25

I^D

(MOSFET)*

T^A= 70

Pulsed Drain Current (MOSFET)

I^DM

I^S

Continuous Source Current (MOSFET Diode Conduction)*

Average Foward Current (Schottky)

Pulsed Foward Current (Schottky)

Maximum Power Dissipation (MOSFET)* T^A= 25

T^A= 70

2.3

1.25

I^F

I^FM

2.5

1.6

2.2

1.4

1.38

0.88

1.25

0.8

P^D

Maximum Power Dissipation (Schottky)* T^A= 25

T^A= 70

-55 to 150

Operating Junction and Storage Temperature Range

T^J, T^stg

*Surface Mounted on 1" X 1" FR4 Board.

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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