Datasheet > KI4464DY

KI4464DY

更新时间： 2024-11-30 12:32:15

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	405K
描述
PWM Optimized for (Lowest Qg and Low RG) TrenchFET Power MOSFET

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中文翻译

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数据手册

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KI4464DY 数据手册

SSMMDD TTyyppee

MOSFIECT

Product specification

KI4464DY

Features

PWM Optimized for (Lowest Q^gand Low R^G)

TrenchFET Power MOSFET

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

V^DS

10 secs

Steady State

Unit

200

Gate-Source Voltage

V^GS

2.2

1.7

1.3

Continuous Drain Current (T^J= 150 ) T^A= 25

T^A= 70

I^D

Pulsed Drain Current

I^DM

I^AS

EAS

I^S

Single Avalanch Current

Single Avalanch Energy

L = 0.1 mH

0.45

Continuous Source Current ( Diode Conduction)*

2.1

2.5

1.6

1.2

1.5

0.9

Maximum Power Dissipation *

T^A= 25

T^A= 70

P^D

-55 to 150

Operating Junction and Storage Temperature Range

*Surface Mounted on 1" X 1" FR4 Board.

T^J, T^stg

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sales@twtysemi.com

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4008-318-123

中文翻译

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KI4505DY	TYSEMI	获取价格	TrenchFET Power MOSFET Drain-Source Voltage Vds 30V