Datasheet > KI4330DY

KI4330DY

更新时间： 2024-11-17 12:04:15

品牌	Logo	应用领域
TYSEMI		测试
页数	文件大小	规格书
2页	130K
描述
TrenchFET Power MOSFETS 100 per Rg Tested Drain-Source Voltage Vds 30V

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数据手册

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KI4330DY 数据手册

SMD Type

ICIC

Product specification

KI4330DY

Features

TrenchFET Power MOSFETS

100 % Rg Tested

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

V^DS

10 secs

Steady State

Unit

Gate-Source Voltage

V^GS

I^D

8.7

7.0

6.6

5.3

Continuous Drain Current (T^J= 150 )*

TA = 25

T^A= 70

Pulsed Drain Current

I^DM

I^S

Continuous Source Current (Diode Conductio*n)

1.7

2.0

1.3

0.9

1.1

0.7

Maximum Power Dissipation

TA = 25

T^A= 70

P^D

Operating Junction and Storage Temperature Range

Parameter

-55 to 150

T^J, T^stg

Symbol

Typical

Maximum

62.5

10 sec

Maximum Junction-to-Ambient*

R^thJA

Steady-State

110

Maximum Junction-to-Foot (Drain)

RthJF

* Surface Mounted on 1" x 1" FR4 Board.

http://www.twtysemi.com

sales@twtysemi.com

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4008-318-123

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