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KI4330DY PDF预览

KI4330DY

更新时间: 2024-10-30 12:04:15
品牌 Logo 应用领域
TYSEMI 测试
页数 文件大小 规格书
2页 130K
描述
TrenchFET Power MOSFETS 100 per Rg Tested Drain-Source Voltage Vds 30V

KI4330DY 数据手册

 浏览型号KI4330DY的Datasheet PDF文件第2页 
ICIC  
Product specification  
KI4330DY  
Features  
TrenchFET Power MOSFETS  
100 % Rg Tested  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
10 secs  
Steady State  
Unit  
V
30  
20  
Gate-Source Voltage  
VGS  
ID  
8.7  
7.0  
6.6  
5.3  
Continuous Drain Current (TJ = 150 )*  
TA = 25  
TA = 70  
A
30  
Pulsed Drain Current  
IDM  
IS  
Continuous Source Current (Diode Conductio*n)  
1.7  
2.0  
1.3  
0.9  
1.1  
0.7  
A
Maximum Power Dissipation  
TA = 25  
TA = 70  
PD  
W
Operating Junction and Storage Temperature Range  
Parameter  
-55 to 150  
TJ, Tstg  
Symbol  
Typical  
45  
Maximum  
62.5  
t
10 sec  
Maximum Junction-to-Ambient*  
RthJA  
/W  
Steady-State  
Steady-State  
85  
110  
Maximum Junction-to-Foot (Drain)  
RthJF  
26  
35  
* Surface Mounted on 1" x 1" FR4 Board.  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 2  
4008-318-123  

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