Datasheet > KI4500BDY

KI4500BDY

更新时间： 2024-11-17 12:31:39

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	186K
描述
TrenchFET Power MOSFET Drain-Source Voltage Vds 20V

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中文翻译

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数据手册

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KI4500BDY 数据手册

SMD Type

Product specification

KI4500BDY

Features

TrenchFET Power MOSFET

Absolute Maximum Ratings TA = 25

N-Channel

10 sec Steady State

P-Channel

Unit

Parameter

Symbol

10 sec

Steady State

-20

Drain-Source Voltage

VDS

V^GS

Gate-Source Voltage

9.1

7.3

6.6

5.3

?5.3

-4.9

-3.8

-3.1

Continuous Drain Current T^A= 25

I^D

(T^J= 150 )*

T^A= 70

-20

Pulsed Drain Current

I^DM

I^S

Continuous Source Current (Diode Conduction)*

2.1

2.5

1.6

1.1

1.3

0.8

-2.1

2.5

1.6

-1.1

1.3

0.8

Maximum Power Dissipation*

T^A= 25

T^A= 70

P^D

-55 to 150

Operating Junction and Storage Temperature Range

*Surface Mounted on FR4 Board;t 10 sec

T^J, T^stg

Thermal Resistance Ratings TA = 25

N-Channel

Typ Max

P-Channel

Typ Max

Parameter

Symbol

Unit

10 sec

Maximum Junction-to-Ambient*

R^thJA

R^thJc

Steady State

Maximum Junction-to-Foot

*Surface Mounted on FR4 Board.

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