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KI4503DY PDF预览

KI4503DY

更新时间: 2024-11-17 05:40:51
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
2页 58K
描述
N- and P-Channel MOSFET

KI4503DY 数据手册

 浏览型号KI4503DY的Datasheet PDF文件第2页 
SMD Type  
Transistors  
Complementary MOSFET Half-Bridge (N- and P-Channel)  
KI4500BDY  
Features  
TrenchFET Power MOSFET  
Absolute Maximum Ratings TA = 25  
N-Channel  
10 sec Steady State  
20  
12  
P-Channel  
10 sec Steady State  
-20  
12  
Parameter  
Symbol  
Unit  
Drain-Source Voltage  
VDS  
VGS  
V
V
Gate-Source Voltage  
9.1  
7.3  
6.6  
5.3  
?5.3  
-4.9  
-3.8  
-3.1  
A
Continuous Drain Current TA = 25  
ID  
A
(TJ = 150 )*  
TA = 70  
30  
-20  
Pulsed Drain Current  
IDM  
IS  
A
Continuous Source Current (Diode Conduction)*  
2.1  
2.5  
1.6  
1.1  
1.3  
0.8  
-2.1  
2.5  
1.6  
-1.1  
1.3  
0.8  
A
W
W
Maximum Power Dissipation*  
TA = 25  
TA = 70  
PD  
-55 to 150  
Operating Junction and Storage Temperature Range  
*Surface Mounted on FR4 Board;t 10 sec  
TJ, Tstg  
Thermal Resistance Ratings TA = 25  
N-Channel  
Typ Max  
P-Channel  
Typ Max  
Parameter  
Symbol  
Unit  
/W  
40  
75  
20  
50  
95  
22  
41  
75  
23  
50  
95  
26  
t
10 sec  
Maximum Junction-to-Ambient*  
RthJA  
RthJc  
Steady State  
Steady State  
Maximum Junction-to-Foot  
*Surface Mounted on FR4 Board.  
1
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