Datasheet > KI50N06DFN

KI50N06DFN

更新时间： 2024-11-21 18:09:11

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
7页	216K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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KI50N06DFN 数据手册

SMD Type

MOSFET

Transistors

N-Channel MOSFET

KI50N06DFN

Ƶ Features

DFN5x6-8(PDFNWB5x6-8L)

ƽ VDS (V) = 60 V

IDMAX = 50 A

ƽ R^DS(ON)=10.8mȍ(max.) @ VGS=10V

ƽ R^DS(ON)=13.5mȍ(max.) @ VGS=4.5V

Ƶ Absolute Maximum Ratings (T

= 25ć unless otherwise noted)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

=25ć

Continuous Drain Current

C=100ć

A=25ć

Continuous Drain Current

A=100ć

Pulsed Drain Current (Note 1)

200

=100ć

=25ć

Diode Continuous Forward Current

Avalanche Current, Single pulse (L=0.5mH) (Note 2)

Avalanche Energy, Single pulse (L=0.5mH) (Note 2)

100

=25ć

Power Dissipation

20.8

C=100ć

A=25ć

Power Dissipation

1.3

2.4

A=100ć

Thermal Resistance.Junction- to-Case

Thermal Resistance.Junction- to-Ambient (Note 3)

Steady State

t İ 10s

șJC

șJA

ഒ/W

Steady State

Junction Temperature

150

-55 to 150

Storage Temperature Range

stg

Notes 1˖Pulse width limited by max. junction temperature.

2˖UIS tested and pulse width limited by maximum junction temperature 150ć(initial temperature T

3˖Surface Mounted on 1in²pad area.

j=25ć).

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