Datasheet > KI4511DY

KI4511DY

更新时间： 2024-11-17 12:31:35

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	157K
描述
TrenchFET Power MOSFET Drain-Source Voltage Vds 20V

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中文翻译

获取价格

数据手册

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KI4511DY 数据手册

SMD Type

TransistIoCrs

Product specification

KI4511DY

Features

TrenchFET Power MOSFET

Absolute Maximum Ratings TA = 25

N-Channel

10 sec Steady State

P-Channel

Unit

Parameter

Symbol

10 sec

Steady State

-20

Drain-Source Voltage

V^DS

V^GS

Gate-Source Voltage

9.6

7.7

7.2

5.8

-6.2

-4.9

-4.6

-3.7

Continuous Drain Current (T^J= 150 )* T^A= 25

T^A= 70

I^D

-40

Pulsed Drain Current

I^DM

I^S

Continuous Source Current (Diode Conduction)*

1.7

0.9

1.1

0.7

-1.7

0.9

1.1

0.7

Maximum Power Dissipation*

T^A= 25

T^A= 70

P^D

1.3

-55 to 150

Operating Junction and Storage Temperature Range

*Surface Mounted on FR4 Board;t 10 sec.

T^J, T^stg

Thermal Resistance Ratings TA = 25

N-Channel

Typ Max

P-Channel

Parameter

Symbol

Unit

Typ

Max

62.5

110

62.5

110

10 sec

Maximum Junction-to-Ambient*

R^thJA

R^thJc

Steady State

Maximum Junction-to-Foot

*Surface Mounted on FR4 Board.

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sales@twtysemi.com

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4008-318-123

中文翻译

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