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KI4511DY PDF预览

KI4511DY

更新时间: 2024-11-19 05:40:51
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
2页 58K
描述
N- and P-Channel 20-V (D-S) MOSFET

KI4511DY 数据手册

 浏览型号KI4511DY的Datasheet PDF文件第2页 
SMD Type  
Transistors  
N- and P-Channel 20-V (D-S) MOSFET  
KI4511DY  
Features  
TrenchFET Power MOSFET  
Absolute Maximum Ratings TA = 25  
N-Channel  
10 sec Steady State  
20  
16  
P-Channel  
Parameter  
Symbol  
Unit  
10 sec  
Steady State  
-20  
12  
Drain-Source Voltage  
VDS  
VGS  
V
V
Gate-Source Voltage  
9.6  
7.7  
7.2  
5.8  
-6.2  
-4.9  
-4.6  
-3.7  
A
Continuous Drain Current (TJ = 150 )* TA = 25  
TA = 70  
ID  
A
40  
-40  
Pulsed Drain Current  
IDM  
IS  
A
Continuous Source Current (Diode Conduction)*  
1.7  
2
0.9  
1.1  
0.7  
-1.7  
2
0.9  
1.1  
0.7  
A
W
W
Maximum Power Dissipation*  
TA = 25  
TA = 70  
PD  
1.3  
1.3  
-55 to 150  
Operating Junction and Storage Temperature Range  
*Surface Mounted on FR4 Board;t 10 sec.  
TJ, Tstg  
Thermal Resistance Ratings TA = 25  
N-Channel  
Typ Max  
P-Channel  
Parameter  
Symbol  
Unit  
/W  
Typ  
50  
Max  
62.5  
110  
35  
50  
85  
30  
62.5  
110  
40  
t
10 sec  
Maximum Junction-to-Ambient*  
RthJA  
RthJc  
Steady State  
Steady State  
90  
Maximum Junction-to-Foot  
30  
*Surface Mounted on FR4 Board.  
1
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