Datasheet > KI4923DY

KI4923DY

更新时间： 2024-09-15 12:31:35

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	198K
描述
TrenchFET Power MOSFETS Advanced High Cell Density Process

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中文翻译

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数据手册

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KI4923DY 数据手册

SMD Type

Product specification

KI4923DY

Features

TrenchFET Power MOSFETS

Advanced High Cell Density Process

1: Source 1

2: Gate 1

3: Source 2

4: Gate 2

7,8: Drain 1

5,6: Drain 2

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

V^DS

10 secs

Steady State

-30

Unit

Gate-Source Voltage

V^GS

-8.3

-6.2

-5

T^A= 25

Continuous Drain Current (T^J= 150 ) *

-6.6

T^A= 70

Pulsed Drain Current

-30

I^DM

I^S

Continuous Source Current *

-1.7

-0.9

1.1

0.7

T^A= 25

T^A= 70

Maximum Power Dissipation *

P^D

1.3

Operating Junction and Storage Temperature Range

Parameter

-55 to 150

T^J, T^stg

Symbol

Typ

Max

62.5

110

Unit

10 sec

Maximum Junction-to-Ambient*

R^thJA

R^thJF

Steady-State

Maximum Junction-to-Foot (Drain)

* Surface Mounted on 1" X 1' FR4 Board.

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