Datasheet > KI4330DY

KI4330DY

更新时间： 2024-10-30 05:40:51

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	51K
描述
Dual N-Channel 30-V (D-S) MOSFET

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中文翻译

获取价格

数据手册

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KI4330DY 数据手册

SMD Type

ICIC

Dual N-Channel 30-V (D-S) MOSFET

KI4330DY

Features

TrenchFET Power MOSFETS

100 % Rg Tested

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

VDS

10 secs

Steady State

Unit

Gate-Source Voltage

V^GS

8.7

7.0

6.6

5.3

Continuous Drain Current (TJ = 150 )*

TA = 25

T^A= 70

Pulsed Drain Current

I^DM

Continuous Source Current (Diode Conductio*n)

1.7

2.0

1.3

0.9

1.1

0.7

Maximum Power Dissipation

T^A= 25

T^A= 70

P^D

Operating Junction and Storage Temperature Range

Parameter

-55 to 150

Maximum

T^J, Tstg

Symbol

Typical

62.5

110

10 sec

Maximum Junction-to-Ambient*

R^thJA

R^thJF

Steady-State

Maximum Junction-to-Foot (Drain)

* Surface Mounted on 1" x 1" FR4 Board.

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中文翻译

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