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KI4433DY PDF预览

KI4433DY

更新时间: 2024-11-17 05:40:51
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
2页 54K
描述
P-Channel 1.8-V (G-S) MOSFET

KI4433DY 数据手册

 浏览型号KI4433DY的Datasheet PDF文件第2页 
SMD Type  
IC  
P-Channel 1.8-V (G-S) MOSFET  
KI4433DY  
Features  
TrenchFET Power MOSFETS  
Fast Switching  
100% Rg Tested  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
10 secs  
Steady State  
-20  
Unit  
V
Gate-Source Voltage  
8
VGS  
-3.9  
-2.8  
-2.9  
-2.1  
TA = 25  
TA = 85  
ID  
Continuous Drain Current (TJ = 150 ) *  
A
-10  
Pulsed Drain Current  
IDM  
IS  
Continuous Source Current *  
-2.1  
2.5  
1.3  
-1.2  
1.4  
A
TA = 25  
TA = 85  
Maximum Power Dissipation *  
PD  
W
Operating Junction and Storage Temperature Range  
* Surface Mounted on 1" X 1" FR4 Board.  
-55 to 150  
TJ, Tstg  
Thermal Resistance Ratings Ta = 25  
Parameter  
Symbol  
RthJA  
Typical  
40  
Maximum  
Unit  
50  
90  
25  
t
10 sec  
Maximum Junction-to-Ambient *  
/W  
Steady State  
Steady State  
75  
Maximum Junction-to-Foot(Drain)  
RthJF  
19  
* Surface Mounted on 1" X 1" FR4 Board.  
1
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