Datasheet > KI4453DY

KI4453DY

更新时间： 2024-11-17 11:29:55

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	53K
描述
P-Channel 12-V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

KI4453DY 数据手册

SMD Type

ICIC

P-Channel 12-V (D-S) MOSFET

KI4453DY

Features

TrenchFET Power MOSFETS

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

V^DS

10 secs

Steady State

-12

Unit

Gate-Source Voltage

VGS

-14

-10

-8

TA = 25

T^A= 70

I^D

Continuous Drain Current (T^J= 150 ) *

-11.5

-50

Pulsed Drain Current

I^DM

Continuous Source Current *

-2.7

3.0

1.9

-1.36

1.5

T^A= 25

T^A= 70

Maximum Power Dissipation *

P^D

0.95

Operating Junction and Storage Temperature Range

* Surface Mounted on 1" X 1" FR4 Board.

-55 to 150

T^J, Tstg

Thermal Resistance Ratings Ta = 25

Parameter

Symbol

R^thJA

Typical

Maximum

Unit

10 sec

Maximum Junction-to-Ambient *

Steady State

Maximum Junction-to-Foot(Drain)

R^thJF

* Surface Mounted on 1" X 1" FR4 Board.

www.kexin.com.cn

中文翻译

下载PDF

与KI4453DY相关器件

型号	品牌	获取价格	描述	数据表
KI4464DY	KEXIN	获取价格	N-Channel 200-V (D-S) MOSFET
KI4464DY	TYSEMI	获取价格	PWM Optimized for (Lowest Qg and Low RG) TrenchFET Power MOSFET
KI4500BDY	KEXIN	获取价格	Complementary MOSFET Half-Bridge (N- and P-Channel)
KI4500BDY	TYSEMI	获取价格	TrenchFET Power MOSFET Drain-Source Voltage Vds 20V
KI4501ADY	TYSEMI	获取价格	TrenchFET Power MOSFET Drain-Source Voltage Vds 30V
KI4501ADY	KEXIN	获取价格	Complementary (N- and P-Channel) MOSFET Half-Bridge
KI4501DY	KEXIN	获取价格	Complementary MOSFET Half-Bridge (N- and P-Channel)
KI4501DY	TYSEMI	获取价格	PIN Configuration Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
KI4503DY	KEXIN	获取价格	N- and P-Channel MOSFET
KI4503DY	TYSEMI	获取价格	TrenchFET Power MOSFET Drain-Source Voltage Vds 30V