Datasheet > KI4501ADY

KI4501ADY

更新时间： 2024-11-17 05:40:51

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	58K
描述
Complementary (N- and P-Channel) MOSFET Half-Bridge

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中文翻译

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数据手册

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KI4501ADY 数据手册

SMD Type

TransistIoCrs

Complementary (N- and P-Channel) MOSFET Half-Bridge

KI4501ADY

Features

TrenchFET Power MOSFET

Absolute Maximum Ratings TA = 25

N-Channel

10 sec Steady State

P-Channel

10 sec Steady State

-8

Parameter

Symbol

Unit

Drain-Source Voltage

V^DS

V^GS

Gate-Source Voltage

8.8

6.3

5.2

-5.7

-4.5

-4.1

-3.3

Continuous Drain Current (T^J= 150 )* TA = 25

T^A= 70

I^D

-30

Pulsed Drain Current

I^DM

I^S

Continuous Source Current (Diode Conduction)*

1.8

2.5

1.6

-1.8

2.5

1.6

1.3

0.84

1.3

0.84

Maximum Power Dissipation*

T^A= 25

T^A= 70

-55 to 150

Operating Junction and Storage Temperature Range

*Surface Mounted on FR4 Board;t 10 sec.

T^J, Tstg

Thermal Resistance Ratings TA = 25

N-Channel

Typ Max

P-Channel

Parameter

Symbol

Unit

Typ

Max

10 sec

Maximum Junction-to-Ambient*

R^thJA

R^thJc

Steady State

Maximum Junction-to-Foot

*Surface Mounted on FR4 Board.

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